參數(shù)資料
型號(hào): M36W216
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
中文描述: 16兆1兆x16插槽,開機(jī)區(qū)塊快閃記憶體和2兆位128KB的x16的SRAM,多個(gè)存儲(chǔ)產(chǎn)品
文件頁(yè)數(shù): 1/62頁(yè)
文件大?。?/td> 434K
代理商: M36W216
1/62
PRELIMINARY DATA
November 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
M36W216TI
M36W216BI
16 Mbit (1Mb x16, Boot Block) Flash Memory
and 2 Mbit (128Kb x16) SRAM, Multiple Memory Product
FEATURES SUMMARY
I
MULTIPLE MEMORY PRODUCT
– 16 Mbit (1Mb x 16) Boot Block Flash Memory
– 2 Mbit (128Kb x 16) SRAM
I
SUPPLY VOLTAGE
– V
DDF
= V
DDS
= 2.7V to 3.3V
– V
DDQF
= V
DDS
= 2.7V to 3.3V
– V
PPF
= 12V for Fast Program (optional)
I
ACCESS TIME: 70ns, 85ns
I
LOW POWER CONSUMPTION
I
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M36W216TI: 88CEh
– Bottom Device Code, M36W216BI: 88CFh
FLASH MEMORY
I
MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
I
PROGRAMMING TIME
– 10μs typical
– Double Word Programming Option
I
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP
F
for Block Lock-Down
I
AUTOMATIC STAND-BY MODE
I
PROGRAM and ERASE SUSPEND
I
100,000 PROGRAM/ERASE CYCLES per
BLOCK
I
COMMON FLASH INTERFACE
– 64 bit Security Code
I
SECURITY
– 64 bit user programmable OTP cells
– 64 bit unique device identifier
– One parameter block permanently lockable
SRAM
I
2 Mbit (128K x 16 bit)
I
ACCESS TIME: 70ns
I
LOW V
DDS
DATA RETENTION: 1.5V
I
POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
Figure 1. Packages
FBGA
Stacked LFBGA66 (ZA)
12 x 8mm
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