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參數(shù)資料
| 型號： | M38504E6SP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
| 中文描述： | 單芯片8位CMOS微機 |
| 文件頁數(shù)： | 51/99頁 |
| 文件大小： | 1384K |
| 代理商： | M38504E6SP |
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51
3850 Group (Spec. H/A)
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
MITSUBISHI MICROCOMPUTERS
Table 11 Summary of M38507F8 (flash memory version)
Item
Power source voltage
FLASH MEMORY MODE
The M38507F8 (flash memory version) has an internal new
DINOR (DIvided bit line NOR) flash memory that can be rewritten
with a single power source when V
CC
is 5 V, and 2 power sources
when V
PP
is 5 V and V
CC
is 3.0-5.5 V in the CPU rewrite and stan-
dard serial I/O modes.
For this flash memory, three flash memory modes are available in
which to read, program, and erase: the parallel I/O and standard
serial I/O modes in which the flash memory can be manipulated
using a programmer and the CPU rewrite mode in which the flash
memory can be manipulated by the Central Processing Unit
(CPU).
Summary
Table 11 lists the summary of the M38507F8 (flash memory ver-
sion).
The flash memory of the M38507F8 is divided into User ROM area
and Boot ROM area as shown in Figure 57.
In addition to the ordinary User ROM area to store the MCU op-
eration control program, the flash memory has a Boot ROM area
that is used to store a program to control rewriting in CPU rewrite
and standard serial I/O modes. This Boot ROM area has had a
standard serial I/O mode control program stored in it when
shipped from the factory. However, the user can write a rewrite
control program in this area that suits the user
’
s application sys-
tem. This Boot ROM area can be rewritten in only parallel I/O
mode.
V
PP
voltage (For Program/Erase)
Flash memory mode
Erase block division
User ROM area
Boot ROM area
Program method
Erase method
Program/Erase control method
Number of commands
Number of program/Erase times
ROM code protection
Specifications
Vcc = 2.7
–
5.5 V
(Note 1)
Vcc = 2.7
–
3.6 V
(Note 2)
4.5-5.5 V
3 modes (Parallel I/O mode, Standard serial I/O mode, CPU rewrite mode)
1 block (32 Kbytes)
1 block (4 Kbytes) (
Note 3
)
Byte program
Batch erasing
Program/Erase control by software command
6 commands
100 times
Available in parallel I/O mode and standard serial I/O mode
Notes 1:
The power source voltage must be Vcc = 4.5
–
5.5 V at program and erase operation.
2:
The power source voltage can be Vcc = 3.0
–
3.6 V also at program and erase operation.
3:
The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory. This Boot ROM area can be
rewritten in only parallel I/O mode.
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