參數(shù)資料
型號: M391T2953CZ3-CCC
元件分類: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
封裝: ROHS COMPLIANT, DIMM-240
文件頁數(shù): 19/24頁
文件大?。?/td> 780K
代理商: M391T2953CZ3-CCC
Rev. 1.5 October 2006
UDIMM
DDR2 SDRAM
4 of 24
Note :
1. “Z” of Part number(11th digit) stand for Lead-free products.
2. “3” of Part number(12th digit) stand for Dummy Pad PCB products.
Part Number
Density
Organization
Component Composition
Number of Rank
Height
x64 Non ECC
M378T3354CZ3-CE7/F7/E6/D5/CC
256MB
32Mx64
32Mx16(K4T51163QC)*4
1
30mm
M378T3354CZ0-CE7/F7/E6/D5/CC
256MB
32Mx64
32Mx16(K4T51163QC)*4
1
30mm
M378T6553CZ3-CE7/F7/E6/D5/CC
512MB
64Mx64
64Mx8(K4T51083QC)*8
1
30mm
M378T6553CZ0-CE7/F7/E6/D5/CC
512MB
64Mx64
64Mx8(K4T51083QC)*8
1
30mm
M378T2953CZ3-CE7/F7/E6/D5/CC
1GB
128Mx64
64Mx8(K4T51083QC)*16
2
30mm
M378T2953CZ0-CE7/F7/E6/D5/CC
1GB
128Mx64
64Mx8(K4T51083QC)*16
2
30mm
x72 ECC
M391T6553CZ3-CE7/F7/E6/D5/CC
512MB
64Mx72
64Mx8(K4T51083QC)*9
1
30mm
M391T6553CZ0-CE7/F7/E6/D5/CC
512MB
64Mx72
64Mx8(K4T51083QC)*9
1
30mm
M391T2953CZ3-CE7/F7/E6/D5/CC
1GB
128Mx72
64Mx8(K4T51083QC)*18
2
30mm
M391T2953CZ0-CE7/F7/E6/D5/CC
1GB
128Mx72
64Mx8(K4T51083QC)*18
2
30mm
Performance range
JEDEC standard 1.8V ± 0.1V Power Supply
VDDQ = 1.8V ± 0.1V
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
4 Banks
Posted CAS
Programmable CAS Latency: 3, 4, 5, 6
Programmable Additive Latency: 0, 1 , 2 , 3, 4, 5
Write Latency(WL) = Read Latency(RL) -1
Burst Length: 4 , 8(Interleave/nibble sequential)
Programmable Sequential / Interleave Burst Mode
Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
Off-Chip Driver(OCD) Impedance Adjustment
On Die Termination with selectable values(50/75/150 ohms or disable)
PASR(Partial Array Self Refresh)
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
- support High Temperature Self-Refresh rate enable feature
Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16
All of Lead-free products are compliant for RoHS
Note: For detailed DDR2 SDRAM operation, please refer to Samsung’s Device operation & Timing diagram.
E7 (DDR2-800)
F7 (DDR2-800)
E6 (DDR2-667)
D5 (DDR2-533)
CC (DDR2-400)
Unit
Speed@CL3
400
-
400
Mbps
Speed@CL4
533
400
533
400
Mbps
Speed@CL5
800
533
667
533
-Mbps
Speed@CL6
-
800
-
-Mbps
CL-tRCD-tRP
5-5-5
6-6-6
5-5-5
4-4-4
3-3-3
CK
Organization
Row Address
Column Address
Bank Address
Auto Precharge
64Mx8(512Mb) based Module
A0-A13
A0-A9
BA0-BA1
A10
32Mx16(512Mb) based Module
A0-A12
A0-A9
BA0-BA1
A10
1.0 DDR2 Unbuffered DIMM Ordering Information
2.0 Features
3.0 Address Configuration
相關PDF資料
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M3933/16-55N 0 MHz - 18000 MHz RF/MICROWAVE FIXED ATTENUATOR
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M3933/16-56S 0 MHz - 18000 MHz RF/MICROWAVE FIXED ATTENUATOR
M3933/16-57N 0 MHz - 18000 MHz RF/MICROWAVE FIXED ATTENUATOR
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