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參數(shù)資料
| 型號： | M40Z111 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | NVRAM Controller for up to Two LPSRAM(NVRAM控制器) |
| 中文描述： | NVRAM中控制器最多兩個(gè)LPSRAM（NVRAM中控制器） |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 80K |
| 代理商： | M40Z111 |
M40Z111
M40Z111W
NVRAM CONTROLLER for up to TWO LPSRAM
August 1998
1/12
CONVERT LOWPOWER SRAMs into
NVRAMs
PRECISIONPOWER MONITORING and
POWER SWITCHING CIRCUITRY
AUTOMATICWRITE-PROTECTION when V
CC
is OUT-OF-TOLERANCE
CHOICE of SUPPLYVOLTAGES and
POWER-FAILDESELECT VOLTAGES:
– M40Z111:
V
CC
= 4.5Vto 5.5V
THS = V
SS
4.5V
≤
V
PFD
≤
4.75V
THS = V
OUT
4.2V
≤
V
PFD
≤
4.5V
– M40Z111W:
V
CC
= 3.0Vto 3.6V
THS = V
SS
2.8V
≤
V
PFD
≤
3.0V
V
CC
= 2.7Vto 3.3V
THS = V
OUT
2.5
≤
V
PFD
≤
2.7V
LESSTHAN 15ns CHIP ENABLE ACCESS
PROPAGATIONDELAY(for 5.0V device)
PACKAGINGINCLUDES a 28-LEADSOIC
and SNAPHAT
TOP
(to be OrderedSeparately)
SOIC PACKAGEPROVIDESDIRECT
CONNECTION for a SNAPHATTOP which
CONTAINS the BATTERY
DESCRIPTION
The M40Z111/111W NVRAM Controller is a self-
contained device which converts a standard low-
power SRAM into a non-volatilememory.
A precision voltage reference and comparator
monitorsthe V
CC
inputforan out-of-tolerancecon-
dition.
AI02238
THS
VCC
M40Z111
M40Z111V
ECON
VSS
E
VOUT
Figure 1. Logic Diagram
THS
Threshold Select Input
E
Chip Enable Input
E
CON
Conditioned Chip Enable Output
V
OUT
Supply Voltage Output
V
CC
Supply Voltage
V
SS
Ground
Table1. Signal Names
SNAPHAT (SH)
Battery
28
1
SOH28 (MH)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M40Z300AV | 3V NVRAM Supervisor for Up to 8 LPSRAMs |
| M40Z300AVMH1E | 3V NVRAM Supervisor for Up to 8 LPSRAMs |
| M40Z300AVMH1F | 3V NVRAM Supervisor for Up to 8 LPSRAMs |
| M40Z300AVMH6E | 3V NVRAM Supervisor for Up to 8 LPSRAMs |
| M40Z300AVMH6F | 3V NVRAM Supervisor for Up to 8 LPSRAMs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M40Z111_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:5V or 3V NVRAM supervisor for up to two LPSRAMs |
| M40Z111MH | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:NVRAM CONTROLLER for up to TWO LPSRAM |
| M40Z111MH6 | 功能描述:監(jiān)控電路 Dual Low Power SRAM RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| M40Z111MH6E | 功能描述:監(jiān)控電路 Dual Low Power SRAM RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
| M40Z111MH6F | 功能描述:監(jiān)控電路 Dual Low Power SRAM RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲（典型值）:10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel |
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