參數(shù)資料
型號: M48T35AV-70PC6
廠商: 意法半導(dǎo)體
英文描述: 256 Kbit 32Kb x8 TIMEKEEPER SRAM
中文描述: 256千位的32KB的SRAM x8計時器
文件頁數(shù): 13/19頁
文件大?。?/td> 148K
代理商: M48T35AV-70PC6
13/19
M48T35AY, M48T35AV
Figure 11. Crystal Accuracy Across Temperature
AI02124
-80
-60
-100
-40
-20
0
20
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
F= -0.038
F
(T - T
0
)
2
±
10%
ppm
C
2
T
0
= 25
°
C
ppm
°
C
Figure 12. Supply Voltage Protection
AI02169
VCC
0.1
μ
F
DEVICE
VCC
VSS
POWER SUPPLY DECOUPLING and
UNDERSHOOT PROTECTION
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass ca-
pacitor value of 0.1μF (as shown in Figure 12) is
recommended in order to provide the needed fil-
tering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one Volt. These nega-
tive spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from V
CC
to V
SS
(cathode
connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount.
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M48T35AV-70PC6TR 256 Kbit 32Kb x8 TIMEKEEPER SRAM
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