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參數(shù)資料
| 型號(hào)： | M48T59-70PC6TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Kbit 8Kb x8 TIMEKEEPER SRAM |
| 中文描述： | 64千位8KB的x8 SRAM的計(jì)時(shí)器 |
| 文件頁(yè)數(shù)： | 15/21頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | M48T59-70PC6TR |
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M48T59, M48T59Y, M48T59V
Figure 13. Supply Voltage Protection
AI02169
VCC
0.1
μ
F
DEVICE
VCC
VSS
POWER SUPPLY DECOUPLING and
UNDERSHOOT PROTECTION
I
CC
transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
CC
bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the V
CC
bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic by-
pass capacitor value of 0.1μF (as shown in Figure
13) is recommended in order to provide the need-
ed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
CC
that drive it to values
below V
SS
by as much as one Volt. These nega-
tive spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, it is recommended to con-
nect a schottky diode from V
CC
to V
SS
(cathode
connected to V
CC
, anode to V
SS
). Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount
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| M48T59Y-70MH1TR | 64 Kbit 8Kb x8 TIMEKEEPER SRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
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| M48T59MH | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Kbit 8Kb x8 TIMEKEEPER SRAM |
| M48T59PC | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Kbit 8Kb x8 TIMEKEEPER SRAM |
| M48T59SH | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Kbit 8Kb x8 TIMEKEEPER SRAM |
| M48T59V | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Kbit 8Kb x8 TIMEKEEPER SRAM |
| M48T59V-70MH1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Kbit 8Kb x8 TIMEKEEPER SRAM |
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