參數(shù)資料
型號(hào): M48Z30PM
廠商: 意法半導(dǎo)體
英文描述: CMOS 32K x 8 ZEROPOWER SRAM
中文描述: 的CMOS 32K的× 8 ZEROPOWER的SRAM
文件頁(yè)數(shù): 8/12頁(yè)
文件大小: 100K
代理商: M48Z30PM
Symbol
Parameter
M48Z30 / 30Y
Unit
-85
-100
Min
Max
Min
Max
t
AVAV
Write Cycle Time
85
100
ns
t
AVWL
Address Valid to Write Enable Low
0
0
ns
t
AVEL
Address Valid to Chip EnableLow
0
0
ns
t
WLWH
Write Enable Pulse Width
65
75
ns
t
ELEH
Chip Enable Low to Chip Enable High
75
90
ns
t
WHAX
Write Enable High to Address Transition
5
5
ns
t
EHAX
Chip Enable High to Address Transition
15
15
ns
t
DVWH
Input Valid to Write Enable High
35
40
ns
t
DVEH
Input Valid to Chip Enable High
35
40
ns
t
WHDX
Write Enable High to Input Transition
0
0
ns
t
EHDX
Chip Enable High to Input Transition
15
15
ns
t
WLQZ(1,2)
Write Enable Low to Output Hi-Z
35
35
ns
t
AVWH
Address Valid to Write Enable High
75
80
ns
t
AVEH
Address Valid to Chip EnableHigh
75
80
ns
t
WHQX(1,2)
Write Enable High to Output Transition
5
5
ns
Notes:
1. C
L
= 5pF (see Figure 4).
2. IfE goes low simultaneouslywith W going low after W going low, the outputs remain in the high-impedance state.
Table 9. Write Mode AC Characteristics
(T
A
= 0 to 70
°
C; V
CC
= 4.75V to 5.5Vor 4.5Vto 5.5V)
8/12
M48Z30, M48Z30Y
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