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參數(shù)資料
| 型號(hào)： | M48Z30Y |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CMOS 32K x 8 ZEROPOWER SRAM |
| 中文描述： | 的CMOS 32K的× 8 ZEROPOWER的SRAM |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 100K |
| 代理商： | M48Z30Y |
Symbol
Parameter
Min
Max
Unit
t
F
(1)
V
PFD
(max) to V
PFD
(min) V
CC
Fall Time
300
μ
s
t
FB(2)
V
PFD
(min) to V
SO
V
CC
Fall Time
10
μ
s
t
WP
Write Protect Time from V
CC
= V
PFD
40
150
μ
s
t
R
V
SO
to V
PFD
(max) V
CC
Rise Time
0
μ
s
t
ER
E Recovery Time
40
120
ms
Notes
: 1. V
PFD
(max) to V
PFD
(min) fall time of less thant
F
may result in deselection/write protection not occurring until 200
μ
s after
V
CC
passes V
PFD
(min).
2. V
PFD
(min) to V
SO
fall time of less than t
FB
may cause corruption of RAM data.
Table 7. Power Down/Up Mode AC Characteristics
(T
A
= 0 to 70
°
C)
Figure5. Power Down/Up Mode AC Waveforms
5/12
M48Z30, M48Z30Y
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| M48Z30Y-100PM1 | 制造商:STMicroelectronics 功能描述:NVRAM NVSRAM PARALLEL 256KBIT 5V 28PIN PMDIP - Bulk |
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