參數資料
型號: M48Z32V-35MT6TR
廠商: 意法半導體
英文描述: 3.3V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM
中文描述: 3.3伏,256千位32千位× 8 ZEROPOWER的SRAM
文件頁數: 4/16頁
文件大?。?/td> 103K
代理商: M48Z32V-35MT6TR
M48Z32V
4/16
Figure 4. Block Diagram
MAXIMUM RATING
Stressing the device above the rating listed in the
“Absolute Maximum Ratings” table may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
reliability.
Refer
STMicroelectronics SURE Program and other rel-
evant quality documents.
also
to
the
Table 2. Absolute Maximum Ratings
Note: 1. Reflow at peak temperature of 215°C to 225°C for < 60 seconds (total thermal budget not to exceed 180°C for between 90 and 120
seconds).
CAUTION:
Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
AI04788
LITHIUM
CELL
VPFD
VCC
VSS
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
32K x 8
SRAM ARRAY
A0-A14
DQ0-DQ7
E
W
G
POWER
USER
SUPPLIED
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
Grade 1
0 to 70
°C
Grade 6
–40 to 85
°C
T
STG
Storage Temperature (V
CC
Off, Oscillator Off)
SOIC
–55 to 125
°C
T
SLD(1)
Lead Solder Temperature for 10 seconds
260
°C
V
IO
Input or Output Voltages
–0.3 to V
CC
+ 0.3
V
V
CC
Supply Voltage
–0.3 to 4.6
V
I
O
Output Current
20
mA
P
D
Power Dissipation
1
W
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