參數(shù)資料
型號(hào): M48Z32V-35MT6TR
廠商: 意法半導(dǎo)體
英文描述: 3.3V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM
中文描述: 3.3伏,256千位32千位× 8 ZEROPOWER的SRAM
文件頁(yè)數(shù): 7/16頁(yè)
文件大小: 103K
代理商: M48Z32V-35MT6TR
7/16
M48Z32V
READ Mode
The M48Z32V is in the READ Mode whenever W
(WRITE Enable) is high, E (Chip Enable) is low.
The device architecture allows ripple-through ac-
cess of data from eight of 262,144 locations in the
static storage array. Thus, the unique address
specified by the 15 Address Inputs defines which
one of the 32,768 bytes of data is to be accessed.
Valid data will be available at the Data I/O pins
within Address Access time (t
AVQV
) after the last
address input signal is stable, providing that the E
and G access times are also satisfied. If the E and
G access times are not met, valid data will be
available after the latter of the Chip Enable Access
time (t
ELQV
) or Output Enable Access time
(t
GLQV
).
The state of the eight three-state Data I/O signals
is controlled by E and G. If the outputs are activat-
ed before t
AVQV
, the data lines will be driven to an
indeterminate state until t
AVQV
. If the Address In-
puts are changed while E and G remain active,
output data will remain valid for Output Data Hold
time (t
AXQX
) but will go indeterminate until the next
Address Access.
Figure 6. READ Mode AC Waveforms
Note: WRITE Enable (W) = High.
AI00925
tAVAV
tAVQV
tAXQX
tELQV
tELQX
tEHQZ
tGLQV
tGLQX
tGHQZ
VALID
A0-A14
E
G
DQ0-DQ7
VALID
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