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參數(shù)資料
| 型號(hào)： | M48Z32VMT |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 3.3V, 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM |
| 中文描述： | 3.3伏，256千位32千位× 8 ZEROPOWER的SRAM |
| 文件頁(yè)數(shù)： | 11/16頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | M48Z32VMT |
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M48Z32V
Data Retention Mode
With valid V
CC
applied, the M48Z32V operates as
a conventional BYTEWIDE static RAM. Should
the supply voltage decay, the RAM will automati-
cally power-fail deselect, write protecting itself
when V
CC
falls within the V
PFD
(max), V
PFD
(min)
window. All outputs become high impedance, and
all inputs are treated as “Don't care.”
Note:
A power failure during a WRITE cycle may
corrupt data at the currently addressed location,
but does not jeopardize the rest of the RAM's con-
tent. At voltages below V
PFD
(min), the user can be
assured the memory will be in a write protected
state, provided the V
CC
fall time is not less than t
F
.
The M48Z32V may respond to transient noise
spikes on V
CC
that reach into the deselect window
during the time the device is sampling V
CC
. There-
fore, decoupling of the power supply lines is rec-
ommended.
When V
CC
drops below V
SO
, the control circuit
switches power to the external battery which pre-
serves data.
As system power returns and V
CC
rises above
V
SO
, the battery is disconnected, and the power
supply is switched to external V
CC
. Write protec-
tion continues until V
CC
reaches V
PFD
(min) plus
t
REC
(min). Normal RAM operation can resume
t
REC
after V
CC
exceeds V
PFD
(max).
For more information on Battery Storage Life refer
to the Application Note AN1012.
Figure 9. Power Down/Up Mode AC Waveforms
Table 9. Power Down/Up AC Characteristics
Note: 1. Valid for Ambient Operating Temperature: T
A
= 0 to 70°C or –40 to 85°C; V
CC
= 3.0 to 3.6V (except where noted).
2. V
PFD
(max) to V
PFD
(min) fall time of less than t
F
may result in deselection/write protection not occurring until 200μs after V
CC
pass-
es V
PFD
(min).
3. V
PFD
(min) to V
SS
fall time of less than t
FB
may cause corruption of RAM data.
4. t
REC
(min) = 20ms for industrial temperature Grade (6) device.
Symbol
Parameter
(1)
Min
Max
Unit
t
PD
E or W at V
IH
before Power Down
0
μs
t
F(2)
V
PFD
(max) to V
PFD
(min) V
CC
Fall Time
300
μs
t
FB(3)
V
PFD
(min) to V
SS
V
CC
Fall Time
10
μs
t
R
V
PFD
(min) to V
PFD
(max) V
CC
Rise Time
10
μs
t
RB
V
SS
to V
PFD
(min) V
CC
Rise Time
1
μs
t
REC(4)
V
PFD
(max) to Inputs Recognized
40
200
ms
AI01168C
VCC
VPFD (max)
INPUTS
(PER CONTROL INPUT)
OUTPUTS
DON'T CARE
HIGH-Z
tF
tFB
tR
tPD
tRB
tDR
VALID
VALID
(PER CONTROL INPUT)
RECOGNIZED
RECOGNIZED
VPFD (min)
VSO
tREC
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