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參數(shù)資料
| 型號： | M48Z35Y-70MH6 |
| 廠商： | 意法半導體 |
| 英文描述： | 256 Kbit 32Kb x8 ZEROPOWER SRAM |
| 中文描述： | 256千位的32KB的SRAM x8 ZEROPOWER |
| 文件頁數(shù)： | 2/18頁 |
| 文件大小： | 135K |
| 代理商： | M48Z35Y-70MH6 |
M48Z35, M48Z35Y
2/18
Figure 2A. DIP Pin Connections
A1
A0
DQ0
DQ1
DQ2
VSS
A7
A6
A5
A4
A3
A2
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
W
DQ5
DQ4
DQ3
A12
A14
VCC
AI01617D
M48Z35
M48Z35Y
8
9
10
11
12
13
14
1
2
3
4
5
6
7
16
15
28
27
26
25
24
23
22
21
20
19
18
17
Table 2. Absolute Maximum Ratings
(1)
Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational section
of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect
reliability.
2.
Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds).
CAUTION:
Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode.
CAUTION:
Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
Grade 1
Grade 6
0 to 70
–40 to 85
°C
T
STG
Storage Temperature (V
CC
Off)
SNAPHAT
SOIC
–40 to 85
–55 to 125
°C
T
SLD (2)
Lead Solder Temperature for 10 seconds
260
°C
V
IO
Input or Output Voltages
–0.3 to 7
V
V
CC
Supply Voltage
–0.3 to 7
V
I
O
Output Current
20
mA
P
D
Power Dissipation
1
W
Figure 2B. SOIC Pin Connections
AI02303C
8
9
10
11
12
13
14
2
3
4
5
6
7
22
21
20
19
18
17
16
15
28
27
26
25
24
23
1
A1
A0
DQ0
DQ1
DQ2
VSS
A7
A6
A5
A4
A3
A2
A13
A8
A9
A11
G
A10
E
DQ7
DQ6
W
DQ5
DQ4
DQ3
A12
A14
VCC
M48Z35Y
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| M48Z35YSH | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Color:Purple; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061; CSA AWM; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
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| M48Z35Y-70MH6E | 功能描述:IC NVSRAM 256KBIT 70NS 28SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| M48Z35Y-70MH6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit 32Kb x8 ZEROPOWER SRAM |
| M48Z35Y-70PC1 | 功能描述:NVRAM 256K (32Kx8) 70ns RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| M48Z35Y-70PC1 | 制造商:STMicroelectronics 功能描述:NVRAM 10 YR BATTERY 256K 48Z35 |
| M48Z35Y-70PC1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256Kbit (32Kbit x 8) ZEROPOWER SRAM |
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