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參數(shù)資料
| 型號： | M48Z35Y-70MH6 |
| 廠商： | 意法半導體 |
| 英文描述： | 256 Kbit 32Kb x8 ZEROPOWER SRAM |
| 中文描述： | 256千位的32KB的SRAM x8 ZEROPOWER |
| 文件頁數(shù)： | 3/18頁 |
| 文件大小： | 135K |
| 代理商： | M48Z35Y-70MH6 |
3/18
M48Z35, M48Z35Y
The M48Z35/35Y is a non-volatile pin and function
equivalent to any JEDEC standard 32K x8 SRAM.
It also easily fits into many ROM, EPROM, and
EEPROM sockets, providing the non-volatility of
PROMs without any requirement for special write
timing or limitations on the number of writes that
can be performed. The 28 pin 600mil DIP
CAPHAT houses the M48Z35/35Y silicon with a
long life lithium button cell in a single package.
The 28 pin 330mil SOIC provides sockets with
gold plated contacts at both ends for direct con-
nection to a separate SNAPHAT housing contain-
ing the battery. The unique design allows the
SNAPHAT battery package to be mounted on top
of the SOIC package after the completion of the
surface mount process. Insertion of the SNAPHAT
housing after reflow prevents potential battery
damage due to the high temperatures required for
device surface-mounting. The SNAPHAT housing
is keyed to prevent reverse insertion.
Table 3. Operating Modes
(1)
Note: 1. X = V
IH
or V
IL
; V
SO
= Battery Back-up Switchover Voltage.
2. See Table 7 for details.
Mode
V
CC
E
G
W
DQ0-DQ7
Power
Deselect
4.75V to 5.5V
or
4.5V to 5.5V
V
IH
X
X
High Z
Standby
Write
V
IL
X
V
IL
D
IN
Active
Read
V
IL
V
IL
V
IH
D
OUT
Active
Read
V
IL
V
IH
V
IH
High Z
Active
Deselect
V
SO
to V
PFD
(min)
(2)
X
X
X
High Z
CMOS Standby
Deselect
≤
V
SO
X
X
X
High Z
Battery Back-up Mode
Figure 3. Block Diagram
AI01619B
LITHIUM
CELL
VPFD
VCC
VSS
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
32K x 8
SRAM ARRAY
A0-A14
DQ0-DQ7
E
W
G
POWER
相關PDF資料 |
PDF描述 |
|---|---|
| M48Z35Y-70MH6TR | 256 Kbit 32Kb x8 ZEROPOWER SRAM |
| M48Z35Y-70PC1 | 256 Kbit 32Kb x8 ZEROPOWER SRAM |
| M48Z35Y-70PC1TR | 256 Kbit 32Kb x8 ZEROPOWER SRAM |
| M48Z35AYMH | ER 5C 5#16 SKT PLUG |
| M48Z35YSH | Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:Solid; Jacket Color:Purple; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061; CSA AWM; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC) RoHS Compliant: Yes |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M48Z35Y-70MH6E | 功能描述:IC NVSRAM 256KBIT 70NS 28SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| M48Z35Y-70MH6TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Kbit 32Kb x8 ZEROPOWER SRAM |
| M48Z35Y-70PC1 | 功能描述:NVRAM 256K (32Kx8) 70ns RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| M48Z35Y-70PC1 | 制造商:STMicroelectronics 功能描述:NVRAM 10 YR BATTERY 256K 48Z35 |
| M48Z35Y-70PC1E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256Kbit (32Kbit x 8) ZEROPOWER SRAM |
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