FUNCTIONAL DESCRIPTION
(continued)
Table 1 :
RemoteControl Commands (address 10, code = 1010)
Command
Number
Function
Code
16 Programs
EOT
Standby
Mute (toggle)
Program 1
Program 2
Program 3
Program 4
Contrast up
Contrast down
Program 5
Program 6
Program 7
Program 8
Memory Seq. up
Memory Seq. down
Program 9
Program 10
Program 11
Program 12
Normalise
On/stby (tog.)
Program 13
Program 14
Program 15
Program 16
Volume up
Volume down
Brightness up
Brightness down
Saturation up
Saturation down
20 Programs
EOT
Standby
Mute (toggle)
Program 1
Program 2
Program 3
Program 4
Contrast up
Contrast down
Program 5
Program 6
Program 7
Program 8
Memory Seq. up
Memory Seq. down
Program 9
Program 0
– 10 (decade)
+ 10 (decade)
Normalise
On/stby (tog.)
1*
NOP
NOP
NOP
Volume up
Volume down
Brightness up
Brightness down
Saturation up
Saturation down
C1
0
1
1
0
1
0
1
1
1
0
1
0
1
1
1
0
1
0
1
1
1
0
1
0
1
1
1
0
0
1
1
C2
0
0
1
0
0
1
1
0
1
0
0
1
1
0
1
0
0
1
1
0
1
0
0
1
1
0
1
0
1
0
1
C3
0
0
0
1
1
1
1
0
0
1
1
1
1
0
0
1
1
1
1
0
0
1
1
1
1
0
0
1
1
1
1
C4
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
C5
0
0
0
0
0
0
0
1
1
1
1
1
1
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
C6
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
29
28
30
The above table showns the difference between the 16 and 20 program optionswith respect to the remote control commands. Commands 16,
17, 18 &21 change functionbetween the two options. Commands 22, 23 & 24 should not be used in the 20 program option,as they have no
function.
NOP = No operation
Program Memory
NV memory(EEPROM) is integratedon the chipto
provide storage for up to 20 stations.
Each memorylocation is17 bits inlengthproviding
12 bits fortuning voltage, 2 bits for band, 2 bits for
two coded multi-standard outputs and 1 bit pro-
gram skipflag.
Individualprogramwordscanbe readoncommand
from the keyboard, remote or data command
sources but can only be written on commandfrom
the keyboard.
There aretwo methodsfor storing a program(writ-
ing the memory): pre and post tuning selectionof
the programnumber. See Commands, section7.
Readingeach memory locationin sequence(upor
down) can alsobe achieved from all thecommand
sources.
All memory timing functions are provided on chip
and only one external transistor is required to
switch the externalmemory supply (25V).
There are essentiallytwo operationscarriedouton
the memory: Write/Modifyand Read.
The Write/Modify cycle consistsof 3 steps :
a) All ”1s” are writtento thebits of the addressed
word.
b) All bits of the word are erased.
c)
The new contents are written.
Usingthismethod allthebitsof theaddressedword
are aged the same. Formore detail concerningthe
write, erase and read current waveforms at the
Memory Supplypin seeM491 datasheet.
MemoryFor Analog Controls
The memory for the analog controls is electrically
identicalto themain programmemory butisorgan-
ised as four 6-bit words located in two sequentially
addressed words at the memory. Each word cor-
responds to the Volume, Brightness, Saturation
and Contrast outputs. At power on reset and nor-
malise command eachmemory word is read out to
its corresponding counterand D/Ain sequence.
M494
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