參數資料
型號: M52D32162A
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 1M x 16Bit x 2Banks Synchronous DRAM
中文描述: 100萬x 16Bit的X 2Banks同步DRAM
文件頁數: 23/30頁
文件大?。?/td> 784K
代理商: M52D32162A
ES MT
Write Interrupted by Precharge Command & Write Burst stop Cycle @ Burst Length =Full page
M52D32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.4
23/30
*Note:
1. Burst can’t end in full page mode, so auto precharge can’t issue.
2.Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by
AC parameter of t
RDL
.
DQM at write interrupted by precharge command is needed to prevent invalid write.
Input data after Row precharge cycle will be masked internally.
3.Burst stop is valid at every burst length.
C L O C K
C K E
A D D R
DQ
DQ M
A10/AP
RAa
CAa
CAb
RAa
DAa0 DAa1
DAb1
DAb0
DAb2
Row Active
(A-Bank)
W rite
(A-Bank)
Burst Stop
W rite
(A-Bank)
:Don't Car e
HIGH
DAa2 DAa3 DAa4
DAb3 DAb4 DAb5
Precharge
( A- Bank)
t
B D L
t
RD L
*Not e 2
CS
RAS
CAS
W E
BA
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
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M52D32162A_09 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM
M52D32162A-10BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM
M52D32162A-10TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M52D32162A-7.5BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M52D32162A-7.5TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM