參數(shù)資料
型號(hào): M52D32162A
廠商: Elite Semiconductor Memory Technology Inc.
英文描述: 1M x 16Bit x 2Banks Synchronous DRAM
中文描述: 100萬(wàn)x 16Bit的X 2Banks同步DRAM
文件頁(yè)數(shù): 26/30頁(yè)
文件大小: 784K
代理商: M52D32162A
ES MT
Self Refresh Entry & Exit Cycle
M52D32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.4
26/30
*Note: TO ENTER SELF REFRESH MODE
1. CS ,RAS & CAS with CKE should be low at the same clock cycle.
2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.
3. The device remains in self refresh mode as long as CKE stays “Low”.
cf.) Once the device enters self refresh mode, minimum t
RAS
is required before exit from self refresh.
TO EXIT SELF REFRESH MODE
4. System clock restart and be stable before returning CKE high.
5. CS Starts from high.
6. Minimum t
RC
is required after CKE going high to complete self refresh exit.
7. 2K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the system uses burst
refresh.
C L O C K
C K E
A D D R
DQ
DQ M
A10/AP
S el f R ef r es h E n t r y
A u t o R ef r es h
: D o n ' t c a r e
S e l f R ef r e s h E xi t
H i - Z
H i - Z
W E
BA
CAS
RAS
CS
*Not e 2
*Not e 1
*Not e 4
t
RCm i n
*Not e 6
* Not e 5
*Not e 7
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
t
S S
*Note3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M52D32162A_09 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM
M52D32162A-10BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM
M52D32162A-10TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M52D32162A-7.5BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M52D32162A-7.5TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM