- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377830 > M52D32321A-10BG (ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC) 512K x 32Bit x 2Banks Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | M52D32321A-10BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 32Bit x 2Banks Synchronous DRAM |
| 中文描述： | 1M X 32 SYNCHRONOUS DRAM, 8 ns, PBGA90 |
| 封裝： | 8 X 13 MM, LEAD FREE, BGA-90 |
| 文件頁(yè)數(shù)： | 13/29頁(yè) |
| 文件大小： | 707K |
| 代理商： | M52D32321A-10BG |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)當(dāng)前第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)
ES MT
M52D32321A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.3
13/29
*Note:
1. All inputs expect CKE & DQM can be don’t care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA.
BA
Active & Read/Write
0
Bank A
1
Bank B
3.Enable and disable auto precharge function are controlled by A10/AP in read/write command.
A10/AP
BA
Operation
0
Disable auto precharge, leave bank A active at end of burst.
0
1
Disable auto precharge, leave bank B active at end of burst.
0
Enable auto precharge, precharge bank A at end of burst.
1
1
Enable auto precharge, precharge bank B at end of burst.
4.A10/AP and BA control bank precharge when precharge command is asserted.
A10/AP
BA
precharge
0
0
Bank A
0
1
Bank B
1
X
Both Banks
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M52D32321A-7.5BG | 512K x 32Bit x 2Banks Synchronous DRAM |
| M52S128168A | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S128168A-10BG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S128168A-10TG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
| M52S128168A-7.5BG | 1M x 16 Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M52D32321A-7.5BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM |
| M52D32321A-7.5BIG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 32MB 1.8V 166MHZ VFBGA90 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM, 32MB, 1.8V, 166MHZ, VFBGA90 |
| M52D32321A-7BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Mobile Synchronous DRAM |
| M52D64164A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Mobile Synchronous DRAM |
| M52D64164A-10BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Mobile Synchronous DRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。