參數(shù)資料
型號(hào)： M52S16161A-10TG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類(lèi)： DRAM
英文描述： 512K x 16Bit x 2Banks Synchronous DRAM
中文描述： 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
封裝： 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50
文件頁(yè)數(shù)： 1/29頁(yè)
文件大?。?/td> 770K
代理商： M52S16161A-10TG
ES MT
M52S16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.5
1/29
SDRAM
512K x 16Bit x 2Banks
FEATURES
z
2.5V power supply
z
LVCMOS compatible with multiplexed address
z
Dual banks operation
z
MRS cycle with address key programs
-
CAS Latency (1, 2 & 3 )
-
Burst Length (1, 2, 4, 8 & full page)
-
Burst Type (Sequential & Interleave)
z
EMRS cycle with address key programs.
z
All inputs are sampled at the positive going edge of the
system clock
z
Burst Read Single-bit Write operation
z
Special Function Support.
-
PASR (Partial Array Self Refresh )
-
TCSR (Temperature compensated Self Refresh)
-
DS (Driver Strength)
z
DQM for masking
z
Auto & self refresh
z
32ms refresh period (2K cycle)
Synchronous DRAM
GENERAL DESCRIPTION
The M52S16161A is 16,777,216 bits synchronous high
data rate Dynamic RAM organized as 2 x 524,288 words by
16 bits, fabricated with high performance CMOS technology.
Synchronous design allows precise cycle control with the
use of system clock I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high
performance memory system applications.
ORDERING INFORMATION
MAX
Freq.
Part NO.
Interface Package Comments
M52S16161A-8TG
125MHz
LVCMOS
50
TSOP(II)
50
TSOP(II)
60 Ball
VFBGA
60 Ball
VFBGA
Pb-free
M52S16161A-10TG
100MHz
LVCMOS
Pb-free
M52S16161A-8BG
125MHz
LVCMOS
Pb-free
M52S16161A-10BG
100MHz
LVCMOS
Pb-free
PIN CONFIGURATION (TOP VIEW)
V
DD
DQ0
DQ1
V
SSQ
DQ2
DQ3
V
DDQ
DQ4
DQ5
V
SSQ
DQ6
DQ7
V
DDQ
LDQM
WE
CAS
RAS
CS
BA
A10/AP
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
V
SS
DQ15
DQ14
V
SSQ
DQ13
DQ12
V
DDQ
DQ11
DQ10
V
SSQ
DQ9
DQ8
V
DDQ
N.C/RFU
UDQM
CLK
CKE
N.C
A9
A8
A7
A6
A5
A4
V
SS
50PIN TSOP(II)
(400mil x 825mil)
(0.8 mm PIN PITCH)
VSS
DQ15
DQ14
VSSQ
DQ13
VDDQ
DQ12
DQ11
DQ10
VSSQ
DQ9
VDDQ
DQ8
NC
NC
NC
NC
UDQM
NC
CLK
CKE
NC
BA
A9
A8
A7
A6
A5
VSS
A4
DQ0
VDD
VDDQ
DQ1
VSSQ
DQ2
DQ4
DQ3
VDDQ
DQ5
VSSQ
DQ6
NC
DQ7
NC
NC
LDQM
WE
CAS
NC
CS
NC
NC
A0
A10
A2
A1
A3
VDD
1
2
3
4
5
6
7
RAS
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
60 Ball VFBGA
(6.4x10.1mm)
(0.65mm ball pitch)
相關(guān)PDF資料
PDF描述
M52S16161A-8BG 512K x 16Bit x 2Banks Synchronous DRAM
M52S16161A-8TG 512K x 16Bit x 2Banks Synchronous DRAM
M52S32162A 1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A-10BG 1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A-10TG 1M x 16Bit x 2Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M52S16161A-8BG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM
M52S16161A-8TG 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM
M52S32162A 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
M52S32162A_08 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM
M52S32162A_1 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM
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