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參數(shù)資料
| 型號(hào)： | M52S16161A-10TG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50 |
| 封裝： | 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 |
| 文件頁數(shù)： | 4/29頁 |
| 文件大?。?/td> | 770K |
| 代理商： | M52S16161A-10TG |
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ES MT
M52S16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.5
4/29
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0
C
°
~ 70
C
°
)
Version
Parameter
Symbol
Test Condition
CAS
Latency
-8
-10
Unit Note
Operating Current
(One Bank Active)
I
CC1
Burst Length = 1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0mA
45
35
mA
1
I
CC2P
CKE
≤
V
IL
(max), t
CC
=15ns
-
mA
Precharge Standby
Current in power-down
mode
I
CC2PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
0.2
mA
I
CC2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
-
mA
Precharge Standby
Current in non
power-down mode
I
CC2NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
-
mA
I
CC3P
CKE
≤
V
IL
(max), t
CC
=15ns
-
Active Standby Current
in power-down mode
I
CC3PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
-
mA
I
CC3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
15
mA
Active Standby Current
in non power-down
mode
(One Bank Active)
I
CC3NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
-
mA
Operating Current
(Burst Mode)
Refresh Current
I
CC4
I
OL
= 0Ma, Page Burst
All Band Activated, tCCD = tCCD (min)
45
35
mA
1
I
CC5
t
RC
≥
t
RC
(min)
45
35
mA
2
TCSR range
70
45
C
°
2 Banks
120
100
1 Bank
110
95
1/2 Bank
100
90
Self Refresh Current
I
CC6
CKE
≤
0.2V
1/4 Bank
90
85
uA
Deep Power Down
Current
I
CC7
CKE
≤
0.2V
10
uA
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2.Refresh period is 32ms. Addresses are changed only one time during t
CC
(min).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M52S16161A-8BG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52S16161A-8TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-10BG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-10TG | 1M x 16Bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M52S16161A-8BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52S16161A-8TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52S32162A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A_08 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52S32162A_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM |
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