- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377830 > M52S16161A-8TG (ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC) 512K x 16Bit x 2Banks Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | M52S16161A-8TG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50 |
| 封裝： | 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 |
| 文件頁(yè)數(shù)： | 16/29頁(yè) |
| 文件大?。?/td> | 770K |
| 代理商： | M52S16161A-8TG |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)當(dāng)前第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)
ES MT
Page Read Cycle at Different Bank @ Burst Length=4
M52S16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.5
16/29
*Note: 1.CS can be don’t cared when RAS , CAS and
WE
are high at the clock high going dege.
2.To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
CLOCK
CKE
CS
RAS
CAS
BA
ADDR
A10/AP
CL=2
CL=3
WE
DQM
HIGH
*Note2
RAa
CAa
RBb
RAa
Read
(A-Bank)
Row Active
Row Active
(B-Bank)
(A-Bank)
Read
(A-Bank)
Read
(B-Bank)
Read
(A-Bank)
Read
(B-Bank)
Precharge
(A-Bank)
: Don't care
DQ
CBb
CAc
CBd
CAe
QAa0
*Note1
RBb
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
QAa1 QAa2 QAa3
QBb0
QBb1 QBb2
QBb3
QAc0
QAc1 QBd0
QBd1
QAe0
QAe1
QAa0 QAa1 QAa2 QAa3
QBb0 QBb1
QBb2 QBb3
QAc0
QAc1 QBd0
QBd1 QAe0
QAe1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M52S32162A | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-10BG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-10TG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-7.5BG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-7.5TG | 1M x 16Bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M52S32162A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A_08 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52S32162A_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-10BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-10BIG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 32MB 2.5V 100MHZ FBGA54 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。