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參數(shù)資料
| 型號： | M52S16161A-8TG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50 |
| 封裝： | 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 |
| 文件頁數(shù)： | 22/29頁 |
| 文件大?。?/td> | 770K |
| 代理商： | M52S16161A-8TG |
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ES MT
Write Interrupted by Precharge Command & Write Burst stop Cycle @ Burst Length =Full page
M52S16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.5
22/29
*Note:
1. Burst can’t end in full page mode, so auto precharge can’t issue.
2.Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by
AC parameter of t
RDL
.
DQM at write interrupted by precharge command is needed to prevent invalid write.
Input data after Row precharge cycle will be masked internally.
3.Burst stop is valid at every burst length.
C L O C K
C K E
A D D R
DQ
DQ M
A10/AP
RAa
CAa
CAb
RAa
DAa0 DAa1
DAb1
DAb0
DAb2
Row Active
(A- Bank)
W rite
(A- Bank)
Burst Stop
W rite
(A-Bank)
:Don't Car e
HIGH
DAa2 DAa3 DAa4
DAb3 DAb4 DAb5
Precharge
(A- Bank)
t
B D L
t
RD L
* Not e 2
CS
RAS
CAS
W E
BA
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M52S32162A | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-10BG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-10TG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-7.5BG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-7.5TG | 1M x 16Bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M52S32162A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A_08 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52S32162A_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-10BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16Bit x 2Banks Synchronous DRAM |
| M52S32162A-10BIG | 制造商:ELITE SEMICONDUCTOR 功能描述:SDRAM 32MB 2.5V 100MHZ FBGA54 |
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