參數(shù)資料
型號(hào): M52S32162A-7.5TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 1M x 16Bit x 2Banks Synchronous DRAM
中文描述: 2M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
封裝: 0.400 INCH, LEAD FREE, TSOP2-54
文件頁數(shù): 19/30頁
文件大小: 787K
代理商: M52S32162A-7.5TG
ES MT
Read & Write Cycle at Different Bank @ Burst Length = 4
M52S32162A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
1.2
19/30
*Note: 1.t
CDL
should be met to complete write.
相關(guān)PDF資料
PDF描述
M538002 524,288-Word x 16-Bit or 1,048,576 x 8-Bit Mask ROM
M541 262,214-Word x 12-Bit Field Memory
M541 TO-220F 5A Triac
M541 Dual Retriggerable One-Shot with Clear and Complementary Outputs
M541 EARTH LEAKAGE CURRENT DETECTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M52S32321A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM
M52S32321A_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM
M52S32321A-10BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM
M52S32321A-10BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM
M52S32321A-6BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 32Bit x 2Banks Synchronous DRAM