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參數(shù)資料
| 型號： | M54532P |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| 中文描述： | 4單位1.5A的達林頓晶體管陣列鉗位二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 76K |
| 代理商： | M54532P |
Aug. 1999
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54532P and M54532FP are four-circuit Darlington transis-
tor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
á
High breakdown voltage (BV
CEO
≥
50V)
á
High-current driving (Ic(max) = 1.5A)
á
With clamping diodes
á
Wide operating temperature range (Ta = –20 to +75
°
C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and power amplification
FUNCTION
The M54532P and M54532FP each have four circuits con-
sisting of NPN Darlington transistors. They have resistance
of 340
between input transistor bases and input pins. A
clamping diode is provided between each output pin (collec-
tor) and COM pin. The output transistor emitters are all con-
nected to the GND pin.
The collector current is 1.5A maximum. Collector-emitter
supply voltage is 50V maximum.
The M54532FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
I
F
V
A
V
V
W
°
C
°
C
Ratings
–0.5 ~ +50
1.5
–0.5 ~ +10
50
1.5
1.25
1.92(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
Symbol
V
CEO
I
C
V
I
V
R
Parameter
Conditions
Unit
A
5.5K
3K
340
COM
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The four circuits share the COM and GND.
Output, H
Current per circuit output, L
Pulse Width
≤
10ms, Duty Cycle
≤
5%
Pulse Width
≤
100ms, Duty Cycle
≥
5%
Ta = 25
°
C, when mounted on board
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
P
d
T
opr
T
stg
Clamping diode forward current
1
OUTPUT4
INPUT4
INPUT3
OUTPUT3
OUTPUT1
INPUT1
O1
←
IN1
→
INPUT2 IN2
→
COM
COMMON
COM
COMMON
GND
GND
NC
NC
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→
O3
←
IN3
OUTPUT2
O2
←
←
IN4
→
O4
16P4(P)
Package type 16P2N-A(FP)
NC : No connection
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M54533P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE |
| M54534FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE |
| M54534P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE |
| M54537P | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:7-Unit 350mA Transistor array |
| M54538P | 制造商:Mitsubishi Electric 功能描述:54538P |
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