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參數(shù)資料
| 型號： | M54532P |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE |
| 中文描述： | 4單位1.5A的達(dá)林頓晶體管陣列鉗位二極管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 76K |
| 代理商： | M54532P |
Aug. 1999
Symbol
Unit
Parameter
Test conditions
Limits
typ
10
500
min
—
—
max
—
—
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
Turn-on time
Turn-off time
C
L
= 15pF (note 1)
V
O
V
IH
V
IL
—
2.2
1.7
8.5
100
2.3
—
V
mA
μ
A
V
—
I
CEO
= 100
μ
A
I
I
= 2mA, I
C
= 1.25A
I
I
= 2mA, I
C
= 0.7A
V
I
= 3V
V
R
= 50V
I
F
= 1.25A
V
CE
= 4V, I
C
= 1A, Ta = 25
°
C
V
(BR) CEO
I
I
I
R
V
F
h
FE
+
: The typical values are those measured under ambient temperature (Ta) of 25
°
C. There is no guarantee that these values are obtained under any
conditions.
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54532P/FP
4-UNIT 1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
V
V
V
—
—
—
0
3
0
50
6
0.4
0
0
—
—
1.25
0.7
A
V
CE (sat)
50
—
—
—
—
—
800
—
1.3
1.1
5
—
1.6
7000
V
ns
ns
t
on
t
off
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
PG
50
C
L
Measured device
OPEN
V
O
R
L
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
μ
s, tr = 6ns, tf = 6ns, Z
O
= 50
V
P
= 3V
P-P
(2) Input-output conditions : R
L
= 8.3
, V
O
= 10V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
ton
50%
50%
50%
50%
toff
INPUT
OUTPUT
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
Limits
typ
Unit
min
max
Parameter
Symbol
I
C
Collector current
(Current per 1 cir-
cuit when 4 circuits
are coming on si-
multaneously)
“H” input voltage
“L” input voltage
Output voltage
Duty Cycle
P : no more than 4%
FP : no more than 2%
Duty Cycle
P : no more than 18%
FP : no more than 9%
Collector-emitter breakdown voltage
Input current
Clamping diode reverse current
Clamping diode forward voltage
DC amplification factor
Symbol
Unit
Parameter
Test conditions
Limits
typ
+
min
max
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
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