參數(shù)資料
型號(hào)： M58BF008D
廠商： 意法半導(dǎo)體
英文描述： 8 Mbit 256Kb x32, Burst Flash Memory
中文描述： 8兆位的256Kb X32號(hào)，突發(fā)快閃記憶體
文件頁數(shù)： 10/36頁
文件大?。?/td> 231K
代理商： M58BF008D
M58BF008
10/36
Clear Status Register (CLRS).
The Clear Status
Register instructionconsists of one write cycle giv-
ing the command 50h at the address 00000h. The
Clear Status Register command clears the bits 3,
4 and5 of theStatus Registerif they havebeen set
to ’1’ by the P/E.C. operation. The Clear Status
Register command should be given after an error
has been detected and before any new operation
is attempted. A Read Memory Array command
should also begiven before data can be read from
the memory array.
Read Electronic Signature (RSIG).
The
Electronic Signature instruction consists of a first
write cycle giving the command 90h at the address
00000h. This is followed by three read operations
at addresses xxxx0h, xxxx1h and xxxx2h which
output the manufacturer, device and version
codes respectively.
Read
Table 7. Instructions
Mne-
monic
Instruction
Cycles
1st Cycle
2nd Cycle
Operation
Address
Data
Operation
Address.
Data
RD
Read Memory
Array
1+
Write
00000h
FFh
Read
Read Address
Data Output
RSR
Read Status
Register
1+
Write
00000h
70h
Read
X
Status
Register
CLRS
Clear Status
Register
1
Write
00000h
50h
RSIG
Read Electronic
Signature
1+++
Write
00000h
90h
Read
Signature
Address
Electronic
Signature
EE
Erase
2
Write
00000h
20h
Write
Block Address
D0h
OBEE
Overlay Block
Erase
2
Write
00000h
02h
Write
Overlay Block
Address
0Dh
PG
Program
2
Write
00000h
40h
Write
Program
Address
Data Input
OBPG
Overlay Block
Program
2
Write
00000h
04h
Write
Overlay Block
Program
Address
Data Input
PES
Program/Erase
Suspend
1
Write
00000h
B0h
PER
Program/Erase
Resume
1
Write
00000h
D0h
ART
Asynch/Synch
Read Toggle
1
Write
00000h
60h
WBT
Wrap//No-wrap
Burst Toggle
1
Write
00000h
30h
OBT
Overlay Block
Read En/Dis
Toggle
1+
Write
00000h
06h
Read
Read Address
Data Output
Read Memory Array (RD).
The Read Memory
Array instruction consists of one write cycle giving
the command FFh atthe address 00000h. Subse-
quent read operations will read the addressed lo-
cation and output the memory data. The data can
be read from the Main memory Array or the Over-
lay memory block if it is enabled.
Read Status Register (RSR).
The Read Status
Register instructionconsists of one write cycle giv-
ing thecommand 70h at theaddress 00000h. Sub-
sequent read operations will output the Status
Register contents. See Table 8 for an explanation
of the Status Register bits. The Status Register in-
dicates when a program or Erase operation is
complete and its success or failure. The Status
Register also indicates if the Overlay block is ac-
cessible for reading. The Read Status Register in-
struction may be given at any time, including while
a program or erase operation in progress.
相關(guān)PDF資料
PDF描述
M58BF008ZA TV 8C 8#20 PIN RECP
M58BW016BT90ZA6T ER 26C 26#16 PIN PLUG
M58BW016BTT ER 26C 26#16 PIN PLUG
M58BW016BTZA 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016DBZA 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58BF008ZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 256Kb x32, Burst Flash Memory
M58BW016BB 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB100T3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB100T6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
M58BW016BB100ZA3T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*