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參數(shù)資料
| 型號： | M58BF008D |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 8 Mbit 256Kb x32, Burst Flash Memory |
| 中文描述： | 8兆位的256Kb X32號，突發(fā)快閃記憶體 |
| 文件頁數(shù)： | 16/36頁 |
| 文件大小： | 231K |
| 代理商： | M58BF008D |
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M58BF008
16/36
Table 15. DC Characteristics
(T
A
= –40 to 125
°
C; V
DD
= 5V
±
10% and V
DDQ
= 3.3V
±
0.3V)
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDQ
±
1
μ
A
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDQ
±
10
μ
A
I
LT1
Input Leakage Current pull-up
0V
≤
V
IN
≤
V
DDQ
–20
–600
μ
A
I
LIVPP
Input Leakage Current pull-down
0
≤
V
PP
≤
12.6
200
μ
A
I
CC
Supply Current (Async. Read)
E = V
IL
, G = V
IL
, f = 5MHz
25
mA
I
CCB
Supply Current (Burst Read)
E = V
IL
, G = V
IL
, f = 40MHz
25
mA
I
CC1
Supply Current (Standby)
E = V
IH
, RP = V
IH
10
μ
A
I
CC2
Supply Current (Power-down)
RP = V
IL
10
μ
A
I
CC3
Supply Current (Program)
Program in Progress
V
PP
= V
PP1
25
mA
V
PP
= V
PPH
25
mA
I
CC4
Supply Current (Erase)
Erase in Progress
V
PP
= V
PP1
25
mA
V
PP
= V
PPH
25
mA
I
PP
Program Current (Read or Standby)
V
PP
≥
V
PP1
200
μ
A
I
PP1
Program Current (Read or Standby)
V
PP
≤
V
PP1
±
15
μ
A
I
PP2
Program Current (Power-down)
RP = V
IL
5
μ
A
I
PP3
Program Current (Program)
Program in Progress
V
PP
= V
PP1
15
mA
V
PP
= V
PPH
25
mA
I
PP4
Program Current (Erase)
Erase in Progress
V
PP
= V
PP1
15
mA
V
PP
= V
PPH
25
mA
V
IL
Input Low Voltage
–0.3
0.1V
DDQ
V
V
IH
Input High Voltage
0.9V
DDQ
V
DDQ
+0.3
V
V
OL
Output Low Voltage
I
OL
= 100
μ
A,
V
DD
= V
DD
min,
V
DDQ
= V
DDQ
min
0.2
V
V
OH
Output High Voltage
I
OL
= –100
μ
A,
V
DD
= V
DD
min,
V
DDQ
= V
DDQ
min
V
DDQ
–0.2
V
V
PP1
Program Voltage
(Program or Erase operations)
4.5
5.5
V
V
PPH
Program Voltage
(Program or Erase operations)
11.4
12.6
V
V
LKO
V
DD
Supply Voltage Lock-out
1.5
V
V
PPLK
Program Voltage Lock-out
1.5
V
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