參數(shù)資料
型號(hào)： M58LW064D110ZA6
廠商： 意法半導(dǎo)體
英文描述： DIODE, LED GREEN SMT SIEMENS LGA670-K
中文描述： 64兆位（和8Mb × 8，4Mb的x16插槽，統(tǒng)一座）3V電源快閃記憶體
文件頁數(shù)： 15/51頁
文件大?。?/td> 349K
代理商： M58LW064D110ZA6
15/51
M58LW064D
ing the Blocks Unprotect command or by using the
Blocks Temporary Unprotect feature of the Reset/
Power-Down pin, RP.
Write to Buffer and Program Command.
The
Write to Buffer and Program command is used to
program the memory array.
Up to 16 Words/32 Bytes can be loaded into the
Write Buffer and programmed into the memory.
Each Write Buffer has the same A5-A22 address-
es. In Byte-wide mode only A0-A4 may change in
Word-wide mode only A1-A4 may change, in .
Four successive steps are required to issue the
command.
1. One Bus Write operation is required to set up
the Write to Buffer and Program Command. Is-
sue the set up command with the selected
memory Block Address where the program op-
eration should occur (any address in the block
where the values will be programmed can be
used). Any Bus Read operations will start to out-
put the Status Register after the 1st cycle.
2. Use one Bus Write operation to write the same
block address along with the value N on the
Data Inputs/Output, where N+1 is the number of
Words/Bytes to be programmed.
3. Use N+1 Bus Write operations to load the ad-
dress and data for each Word into the Write
Buffer. See the constraints on the address com-
binations listed below. The addresses must
have the same A5-A22.
4. Finally, use one Bus Write operation to issue the
final cycle to confirm the command and start the
Program operation.
Invalid address combinations or failing to follow
the correct sequence of Bus Write cycles will set
an error in the Status Register and abort the oper-
ation without affecting the data in the memory ar-
ray. The Status Register should be cleared before
re-issuing the command.
If the block being programmed is protected an er-
ror will be set in the Status Register and the oper-
ation will abort without affecting the data in the
memory array. The block must be unprotected us-
ing the Blocks Unprotect command.
See Appendix C, Figure 16, Write to Buffer and
Program Flowchart and Pseudo Code, for a sug-
gested flowchart on using the Write to Buffer and
Program command.
Program/Erase Suspend Command.
The
gram/Erase Suspend command is used to pause a
Word/Byte Program, Write to Buffer and Program
or Erase operation. The command will only be ac-
cepted during a Program or an Erase operation. It
can be issued at any time during an Erase opera-
tion but will only be accepted during a Word Pro-
Pro-
gram or Write to Buffer and Program command if
the Program/Erase Controller is running.
One Bus Write cycle is required to issue the Pro-
gram/Erase Suspend command and pause the
Program/Erase Controller. Once the command is
issued it is necessary to poll the Program/Erase
Controller Status bit (bit 7) to find out when the
Program/Erase Controller has paused; no other
commands will be accepted until the Program/
Erase Controller has paused. After the Program/
Erase Controller has paused, the memory will con-
tinue to output the Status Register until another
command is issued.
During the polling period between issuing the Pro-
gram/Erase Suspend command and the Program/
Erase Controller pausing it is possible for the op-
eration to complete. Once the Program/Erase
Controller Status bit (bit 7) indicates that the Pro-
gram/Erase Controller is no longer active, the Pro-
gram Suspend Status bit (bit 2) or the Erase
Suspend Status bit (bit 6) can be used to deter-
mine if the operation has completed or is suspend-
ed. For timing on the delay between issuing the
Program/Erase Suspend command and the Pro-
gram/Erase Controller pausing see Table 9.
During Program/Erase Suspend the Read Memo-
ry Array, Read Status Register, Read Electronic
Signature, Read Query and Program/Erase Re-
sume commands will be accepted by the Com-
mand Interface. Additionally, if the suspended
operation was Erase then the Write to Buffer and
Program, and the Program Suspend commands
will also be accepted. When a program operation
is completed inside a Block Erase Suspend the
Read Memory Array command must be issued to
reset the device in Read mode, then the Erase Re-
sume command can be issued to complete the
whole sequence. Only the blocks not being erased
may be read or programmed correctly.
See Appendix C, Figure 17, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
19, Erase Suspend & Resume Flowchart and
Pseudo Code, for suggested flowcharts on using
the Program/Erase Suspend command.
Program/Erase Resume Command.
The
gram/Erase Resume command can be used to re-
start the Program/Erase Controller after a
Program/Erase Suspend operation has paused it.
One Bus Write cycle is required to issue the Pro-
gram/Erase Resume command. Once the com-
mand is issued subsequent Bus Read operations
read the Status Register.
Block Protect Command.
The Block Protect
command is used to protect a block and prevent
Program or Erase operations from changing the
data in it. Two Bus Write cycles are required to is-
sue the Block Protect command; the second Bus
Write cycle latches the block address in the inter-
Pro-
相關(guān)PDF資料
PDF描述
M58LW064D110ZA6E 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA6F GREEN SMT 0805 9MCD @ 20MA TYP
M58LW064D110ZA6T 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA1 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW064D110ZA6E 制造商:Micron Technology Inc 功能描述:
M58LW064D110ZA6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58LW064D110ZA6T 功能描述:閃存 8Mx8 or 4Mx16 110ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW128A 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW128A150N1 功能描述:閃存 8Mx16 or 4Mx32 150ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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