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參數(shù)資料
| 型號(hào)： | M58LW128B150N1E |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| 中文描述： | 128兆位和8Mb x16或4Mb的X32號(hào)，統(tǒng)一座，突發(fā)3V電源閃存 |
| 文件頁數(shù)： | 31/65頁 |
| 文件大小： | 932K |
| 代理商： | M58LW128B150N1E |
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M58LW128A, M58LW128B
Table 12. Status Register Bits
Note: 1.
For Program operations during Erase Suspend Bit 6 is ‘1’, otherwise Bit 6 is ‘0’.
Operation
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
RB
Program/Erase Controller Active
‘0’
Hi-Z
V
OL
Write Buffer not ready
‘0’
Hi-Z
V
OL
Write Buffer ready
‘1’
X
(1)
‘0’
‘0’
‘0’
‘0’
‘0’
Hi-Z
Program suspended
‘1’
X
(1)
‘0’
‘0’
‘0’
‘1’
‘0’
Hi-Z
Program/Block Protect completed successfully
‘1’
X
(1)
‘0’
‘0’
‘0’
‘0’
‘0’
Hi-Z
Program/Block Protect failure due to incorrect command
sequence
’1’
X
(1)
‘1’
‘1’
‘0’
‘0’
‘0’
Hi-Z
Program/Block Protect failure due to V
PP
Error
’1’
X
(1)
‘0’
‘1’
‘1’
‘0’
‘0’
Hi-Z
Program failure due to Block Protection
‘1’
X
(1)
‘0’
‘1’
‘0’
‘0’
‘1’
Hi-Z
Program/Block Protect failure due cell failure or unerased cell
‘1’
X
(1)
‘0’
‘1’
‘0’
‘0’
‘0’
Hi-Z
Erase suspended
‘1’
‘1’
‘0’
‘0’
‘0’
‘0’
‘0’
Hi-Z
Erase/Blocks Unprotect completed successfully
‘1’
‘0’
‘0’
‘0’
‘0’
‘0’
‘0’
Hi-Z
Erase/Blocks Unprotect failure due to incorrect command
sequence
‘1’
X
‘1’
‘1’
‘0’
‘0’
‘0’
Hi-Z
Erase/Block Unprotect failure due to V
PP
Error
’1’
‘0’
‘1’
‘0’
‘1’
‘0’
‘0’
Hi-Z
Erase failure due to Block Protection
‘1’
‘0’
‘1’
‘0’
‘0’
‘0’
‘1’
Hi-Z
Erase/Blocks Unprotect failure due to failed cell(s) in block
‘1’
‘0’
‘1’
‘0’
‘0’
‘0’
‘0’
Hi-Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW128B150N1F | 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N1T | RECEPTACLE HOUSING, 5WAY |
| M58LW64D | 64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory |
| M58MR016C | 16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| M58MR032C | 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW128B150N1F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
| M58LW128B150N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories |
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