參數(shù)資料
型號(hào): M58LW128B150N1E
廠商: 意法半導(dǎo)體
英文描述: 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
中文描述: 128兆位和8Mb x16或4Mb的X32號(hào),統(tǒng)一座,突發(fā)3V電源閃存
文件頁數(shù): 35/65頁
文件大?。?/td> 932K
代理商: M58LW128B150N1E
35/65
M58LW128A, M58LW128B
Figure 12. Asynchronous Bus Read AC Waveforms
Note: Asynchronous Read (M15 = 1), Random Read (M3 = 0)
Table 17. Asynchronous Bus Read AC Characteristics.
Symbol
Parameter
Test Condition
M58LW128
Unit
150
t
AVAV
Address Valid to Address Valid
E = V
IL
, G = V
IL
Min
150
ns
t
AVQV
Address Valid to Output Valid
E = V
IL
, G = V
IL
Max
150
ns
t
ELQX
Chip Enable Low to Output Transition
G = V
IL
Min
0
ns
t
ELQV
Chip Enable Low to Output Valid
G = V
IL
Max
150
ns
t
GLQX
Output Enable Low to Output Transition
E = V
IL
Min
0
ns
t
GLQV
Output Enable Low to Output Valid
E = V
IL
Max
30
ns
t
EHQX
Chip Enable High to Output Transition
G = V
IL
Min
0
ns
t
GHQX
Output Enable High to Output Transition
E = V
IL
Min
0
ns
t
AXQX
Address Transition to Output Transition
E = V
IL
, G = V
IL
Min
0
ns
t
EHQZ
Chip Enable High to Output Hi-Z
G = V
IL
Max
10
ns
t
GHQZ
Output Enable High to Output Hi-Z
E = V
IL
Max
10
ns
AI06131
E
G
A1-A23
DQ0-DQx
VALID
tAXQX
tELQX
tAVQV
tGLQV
tGLQX
tEHQZ
tEHQX
tGHQX
OUTPUT
tAVAV
tGHQZ
tELQV
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