參數(shù)資料
型號(hào): M58LW128B150N1T
廠商: 意法半導(dǎo)體
英文描述: RECEPTACLE HOUSING, 5WAY
中文描述: 128兆位和8Mb x16或4Mb的X32號(hào),統(tǒng)一座,突發(fā)3V電源閃存
文件頁數(shù): 55/65頁
文件大?。?/td> 932K
代理商: M58LW128B150N1T
55/65
M58LW128A, M58LW128B
Table 32. Device Geometry Definition
Note: 1.
For M58LW128B, A1 = Don’t Care. N/A = Not Applicable.
2. DQ31-DQ16 are available in the M58LW128B only. They are in the high-impedance state when the device operates In x16 mode.
Table 33. Block Status Register
Note: 1. BA specifies the block address location, A23-A17.
Address
(1)
A23-A1 (M58LW128A)
A23-A2 (M58LW128B)
DQ31-DQ16
(2)
DQ15-DQ0
Description
27h
0000
0018h
2
n
number of bytes memory Size
28h
N/A
0001h
Device Interface M58LW128A
0000
0004h
Device Interface M58LW128B
29h
0000
0000h
2Ah
0000
0005h
Maximum number of bytes in Write Buffer, 2
n
2Bh
0000
0000h
2Ch
0000
0001h
Bit7-0 = number of Erase Block Regions in device
2Dh
0000
007Fh
Number (n-1) of Erase Blocks of identical size; n=128
2Eh
0000
0000h
2Fh
0000
0000h
Erase Block Region Information
x 256 bytes per Erase block (128K bytes)
30h
0000
0002h
Address
A23-A1 (M58LW128A)
A23-A2 (M58LW128B)
Data
Selected Block Information
(BA+2)h
(1)
bit0
0
Block Unprotected
1
Block Protected
bit7-1
0
Reserved for future features
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