參數(shù)資料
型號(hào)： M58LW128B150ZA6T
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
中文描述： 128兆位和8Mb x16或4Mb的X32號(hào)，統(tǒng)一座，突發(fā)3V電源閃存
文件頁(yè)數(shù)： 15/65頁(yè)
文件大小： 932K
代理商： M58LW128B150ZA6T
15/65
M58LW128A, M58LW128B
first. The Data Inputs/Outputs are latched by the
Command Interface on the rising edge of Chip En-
able or Write Enable, whichever occurs first. Out-
put Enable must remain High, V
IH
, during the
whole Asynchronous Bus Write operation. See
Figures 16 and 18 Asynchronous Latch Controlled
Write AC Waveforms, and Tables 20 and 21,
Asynchronous Write and Latch Controlled Write
AC Characteristics, for details of the timing re-
quirements.
Output Disable.
The Data Inputs/Outputs are in
the high impedance state when the Output Enable
is High.
Standby.
When Chip Enable is High, V
IH
, the
memory enters Standby mode and the Data In-
puts/Outputs pins are placed in the high imped-
ance state regardless of Output Enable or Write
Enable. The Supply Current is reduced to the
Standby Supply Current, I
DD1
.
During Program or Erase operations the memory
will continue to use the Program/Erase Supply
Current, I
DD3
, for Program or Erase operations un-
til the operation completes.
Power-Down.
The memory is in Power-Down
mode when Reset/Power-Down, RP, is Low. The
current is reduced to I
DD2
, and the outputs are
high impedance, independent of Chip Enable,
Output Enable or Write Enable.
Table 2. Asynchronous Bus Operations
Note: 1.
X = Don’t Care V
IL
or V
IH
. High = V
IH
or V
HH
.
2. M15 = 1, Bits M15 and M3 are in the Burst Configuration Register.
Bus Operation
Step
E
G
W
RP
M3
(2)
L
A1-A23
DQ0-DQ31
Asynchronous Bus Read
V
IL
V
IL
V
IH
High
0
X
Address
Data Output
Asynchronous Latch
Controlled Bus Read
Address Latch
V
IL
V
IL
V
IH
High
1
V
IL
Address
High Z
Read
V
IL
V
IL
V
IH
High
1
V
IH
X
Data Output
Asynchronous Page Read
V
IL
V
IL
V
IH
High
0
X
Address
Data Output
Asynchronous Bus Write
V
IL
V
IH
V
IL
High
X
V
IL
Address
Data Input
Asynchronous Latch
Controlled Bus Write
Address Latch
V
IL
V
IH
V
IL
High
X
V
IL
Address
Data Input
Output Disable
V
IL
V
IH
V
IH
High
X
X
X
High Z
Standby
V
IH
X
X
High
X
X
X
High Z
Power-Down
X
X
X
V
IL
X
X
X
High Z
相關(guān)PDF資料
PDF描述
M58LW128B 128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW128BZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
M58LW128D110N1 制造商:Micron Technology Inc 功能描述:128M (16MX8/8MX16) 3V, UNIFORM SECTOR, TSOP56, COM - Trays
M58LW64D 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
M58MR016C 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 1Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
M58MR016C120ZC6T 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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