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參數(shù)資料
| 型號(hào)： | M58WR032FB60ZB6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 36/86頁(yè) |
| 文件大?。?/td> | 1306K |
| 代理商： | M58WR032FB60ZB6 |
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M58WR032FT, M58WR032FB
36/86
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in
Ta-
ble 14.
Exact erase times may change depending
on the memory array condition. The best case is
when all the bits in the block or bank are at ‘0’ (pre-
programmed). The worst case is when all the bits
in the block or bank are at ‘1’ (not prepro-
grammed). Usually, the system overhead is negli-
gible with respect to the erase time.
In the M58WR032FT/B the maximum number of
Program/ Erase cycles depends on the V
PP
volt-
age supply used.
Table 14. Program/Erase Times and Endurance Cycles
Parameter
Condition
Min
Typ
Typical after
100k W/E
Cycles
Max
Unit
V
P
D
Erase
Parameter Block (4 KWord)
(2)
0.3
1
2.5
s
Main Block (32
KWord)
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1.1
4
s
Bank (4Mbit)
Preprogrammed
3
s
Not Preprogrammed
4.5
s
Program
(3)
Word
10
10
100
μs
Parameter Block (4 KWord)
32
ms
Main Block (32 KWord)
256
ms
Suspend Latency
Program
5
10
μs
Erase
5
20
μs
Program/Erase
Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58WR032FB60ZB6E | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB60ZB6F | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB60ZB6T | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6 | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6E | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR032FB60ZB6E | 功能描述:閃存 32MB 1.8V SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58WR032FB60ZB6F | 功能描述:閃存 32MB 1.8V SUPPLY RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M58WR032FB60ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB70ZB6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
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