參數(shù)資料
型號(hào): M58WR032FB60ZB6F
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述: 32兆位(含2Mb × 16,多銀行,突發(fā))1.8V電源快閃記憶體
文件頁(yè)數(shù): 1/86頁(yè)
文件大小: 1306K
代理商: M58WR032FB60ZB6F
1/86
November 2004
M58WR032FT
M58WR032FB
32 Mbit (2Mb x16, Multiple Bank, Burst)
1.8V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
V
DD
= 1.7V to 2V for Program, Erase and
Read
V
DDQ
= 1.7V to 2.24V for I/O Buffers
V
PP
= 12V for fast Program (optional)
SYNCHRONOUS / ASYNCHRONOUS READ
Synchronous Burst Read mode: 66MHz
Asynchronous/ Synchronous Page Read
mode
Random Access: 60ns, 70ns, 80ns
SYNCHRONOUS BURST READ SUSPEND
PROGRAMMING TIME
8μs by Word typical for Fast Factory
Program
Double/Quadruple Word Program option
Enhanced Factory Program options
MEMORY BLOCKS
Multiple Bank Memory Array: 4 Mbit
Banks
Parameter Blocks (Top or Bottom
location)
DUAL OPERATIONS
Program Erase in one Bank while Read in
others
No delay between Read and Write
operations
BLOCK LOCKING
All blocks locked at Power up
Any combination of blocks can be locked
WP for Block Lock-Down
SECURITY
128 bit user programmable OTP cells
64 bit unique device number
COMMON FLASH INTERFACE (CFI)
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Device Codes:
M58WR032FT (Top): 8814h
M58WR032FB (Bottom): 8815h
PACKAGE
Compliant with Lead-Free Soldering
Processes
Lead-Free Versions
FBGA
VFBGA56 (ZB)
7.7 x 9 mm
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