參數(shù)資料
型號: M58WR032FB60ZB6F
廠商: 意法半導(dǎo)體
英文描述: 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述: 32兆位(含2Mb × 16,多銀行,突發(fā))1.8V電源快閃記憶體
文件頁數(shù): 41/86頁
文件大?。?/td> 1306K
代理商: M58WR032FB60ZB6F
41/86
M58WR032FT, M58WR032FB
Table 19. DC Characteristics - Voltages
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DDQ
–0.4
V
DDQ
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
I
OH
= –100μA
V
DDQ
–0.1
V
V
PP1
V
PP
Program Voltage-Logic
Program, Erase
1.1
1.8
3.3
V
V
PPH
V
PP
Program Voltage Factory
Program, Erase
11.4
12
12.6
V
V
PPLK
Program or Erase Lockout
0.4
V
V
LKO
V
DD
Lock Voltage
1
V
V
RPH
RP pin Extended High Voltage
3.3
V
相關(guān)PDF資料
PDF描述
M58WR032FB60ZB6T 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB70ZB6 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB70ZB6E 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB70ZB6F 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB70ZB6T 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR032FB60ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB70ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB70ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB70ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB70ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory