參數(shù)資料
型號(hào)： M58WR032FB80ZB6
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
中文描述： 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 33/86頁(yè)
文件大?。?/td> 1306K
代理商： M58WR032FB80ZB6
33/86
M58WR032FT, M58WR032FB
DUAL OPERATIONS AND MULTIPLE BANK ARCHITECTURE
The
Multiple
Bank
Architecture
M58WR032FT/B provides flexibility for software
developers by allowing code and data to be split
with 4Mbit granularity. The Dual Operations fea-
ture simplifies the software management of the de-
vice and allows code to be executed from one
bank while another bank is being programmed or
erased.
The Dual operations feature means that while pro-
gramming or erasing in one bank, Read opera-
tions are possible in another bank with zero
latency (only one bank at a time is allowed to be in
Program or Erase mode). If a Read operation is re-
quired in a bank which is programming or erasing,
the Program or Erase operation can be suspend-
of
the
ed. Also if the suspended operation was Erase
then a Program command can be issued to anoth-
er block, so the device can have one block in
Erase Suspend mode, one programming and oth-
er banks in Read mode. Bus Read operations are
allowed in another bank between setup and con-
firm cycles of program or erase operations. The
combination of these features means that read op-
erations are possible at any moment.
Tables
11
and
12
show the dual operations possi-
ble in other banks and in the same bank. For a
complete list of possible commands refer to
AP-
PENDIX D., COMMAND INTERFACE STATE TA-
BLES
.
Table 11. Dual Operations Allowed In Other Banks
Table 12. Dual Operations Allowed In Same Bank
Note: 1. Not allowed in the Block or Word that is being erased or programmed.
2. The Read Array command is accepted but the data output is not guaranteed until the Program or Erase has completed.
Status of bank
Commands allowed in another bank
Read
Array
Read
Status
Register
Read
CFI
Query
Read
Electronic
Signature
Program
Block
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
Yes
Yes
Yes
Yes
–
–
Yes
–
Erasing
Yes
Yes
Yes
Yes
–
–
Yes
–
Program Suspended
Yes
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes
Yes
Yes
Yes
Yes
–
–
Yes
Status of bank
Commands allowed in same bank
Read
Array
Read
Status
Register
Read
CFI Query
Read
Electronic
Signature
Program
Block
Erase
Program/
Erase
Suspend
Program/
Erase
Resume
Idle
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Programming
–
(2)
Yes
Yes
Yes
–
–
Yes
–
Erasing
–
(2)
Yes
Yes
Yes
–
–
Yes
–
Program Suspended
Yes
(1)
Yes
Yes
Yes
–
–
–
Yes
Erase Suspended
Yes
(1)
Yes
Yes
Yes
Yes
(1)
–
–
Yes
相關(guān)PDF資料
PDF描述
M58WR032FB80ZB6E 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6F 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZB 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032F-ZBT RECTIFIER SCHOTTKY SINGLE 1A 40V 25A-ifsm 0.9V-vf 10mA-ir DO-41 5K/REEL-13
M58WR032FB DIODE, SCHOTTKY, 20V, 3A.
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58WR032FB80ZB6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FB80ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
M58WR032FT60ZB6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory
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