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參數(shù)資料
| 型號： | M58WR032FB80ZB6 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 32兆位（含2Mb × 16，多銀行，突發(fā)）1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 82/86頁 |
| 文件大?。?/td> | 1306K |
| 代理商： | M58WR032FB80ZB6 |
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M58WR032FT, M58WR032FB
82/86
Table 41. Command Interface States - Modify Table, Next Output
Note: 1. CI = Command Interface, CR = Configuration Register, EFP = Enhanced Factory Program, Quad EFP = Quadruple Enhanced Fac-
tory Program, DWP = Double Word Program, QWP = Quadruple Word Program, P/E. C. = Program/Erase Controller.
2. At Power-Up, all banks are in Read Array mode. A Read Array command issued to a busy bank, results in undetermined data out-
put.
3. The two cycle command should be issued to the same bank address.
4. If the P/E.C. is active, both cycles are ignored.
5. The Clear Status Register command clears the Status Register error bits except when the P/E.C. is busy or suspended.
6. The output state shows the type of data that appears at the outputs if the bank address is the same as the command address. A
bank can be placed in Read Array, Read Status Register, Read Electronic Signature or Read CFI Query mode, depending on the
command issued. Each bank remains in its last output state until a new command is issued. The next state does not depend on the
bank’s output state.
Current CI State
Command Input
(6)
Read
Array
(2)
(FFh)
WP
setup
(3,4)
(10/40h)
DWP,
QWP
Setup
(3,4)
(35h, 56h)
Block
Erase,
Bank
Erase
Setup
(3,4)
(20h,
80h)
EFP
Setup
(30h)
Quad-EFP
Setup
(75h)
Erase
Confirm
P/E
Resume,
Block
Unlock
confirm,
EFP
Confirm
(D0h)
Program/
Erase
Suspend
(B0h)
Read Status
Register
(70h)
Clear status
Register
(5)
(50h)
Program Setup
Erase Setup
OTP Setup
Program in
Erase Suspend
EFP Setup
EFP Busy
EFP Verify
Quad EFP Setup
Quad EFP Busy
Lock/CR Setup
Lock/CR Setup
in Erase
Suspend
Status Register
Status Register
OTP Busy
Array
Status Register
Output Unchanged
Status
Register
Output
Unchanged
Status
Register
Ready
Array
Status Register
Output Unchanged
Status
Register
Output
Unchanged
Electronic
Signature/
CFI
Program Busy
Erase Busy
Program/Erase
Program Busy in
Erase Suspend
Program
Suspend in
Erase Suspend
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58WR032FB80ZB6E | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6F | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032F-ZB | 32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032F-ZBT | RECTIFIER SCHOTTKY SINGLE 1A 40V 25A-ifsm 0.9V-vf 10mA-ir DO-41 5K/REEL-13 |
| M58WR032FB | DIODE, SCHOTTKY, 20V, 3A. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58WR032FB80ZB6E | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6F | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FB80ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
| M58WR032FT60ZB6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory |
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