參數(shù)資料
型號： M59DR008E100ZB1T
廠商： 意法半導體
英文描述： 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
中文描述： 8兆位512KB的x16插槽，雙行，第低壓閃存
文件頁數(shù)： 33/37頁
文件大?。?/td> 267K
代理商： M59DR008E100ZB1T
33/37
M59DR008E, M59DR008F
Table 29. Ordering Information Scheme
Devices are shipped from the factory with the memory content erased (to FFFFh).
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de-
vice, please contact the STMicroelectronics Sales Office nearest to you.
Table 30. Revision History
Example:
M59DR008E
100 ZB
6
T
Device Type
M59
Architecture
D = Dual Bank Page Mode
Operating Voltage
R = 1.8V
Device Function
008E = 8 Mbit (512Kb x16), Dual Bank: 1/half-1/half partitioning, Top Boot
008F = 8 Mbit (512Kb x16), Dual Bank: 1/half-1/half partitioning, Bottom Boot
Random Speed
100 = 100 ns
120 = 120 ns
Package
N = TSOP48: 12 x 20mm
ZB = FBGA48: 0.75mm pitch
Temperature Range
1 = 0 to 70°C
6 = –40 to 85°C
Option
T = Tape & Reel packing
Date
Revision Details
September 1999
First Issue
10/06/99
FBGA Connections change (Table 1, Figure 2A)
t
WHGL
and t
EHGL
Specification change (Table 26, 27)
10/20/99
FBGA Package Outline drawing and Mechanical Data change (Table 32, Figure 15)
Daisy Chain diagrams, Package and PCB Connections, added (Figure 16, 17)
相關PDF資料
PDF描述
M59DR008E100ZB6T 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008EZB 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008FZB 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008EN 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
M59DR008E100ZB6T 功能描述:閃存 8M (512Kx16) 100ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M59DR008E120N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E120N6T 功能描述:閃存 8M (512Kx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M59DR008E120ZB1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008E120ZB6T 功能描述:閃存 8M (512Kx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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