參數(shù)資料
型號: M59DR008EZB
廠商: 意法半導體
英文描述: 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
中文描述: 8兆位512KB的x16插槽,雙行,第低壓閃存
文件頁數(shù): 33/37頁
文件大?。?/td> 267K
代理商: M59DR008EZB
33/37
M59DR008E, M59DR008F
Table 29. Ordering Information Scheme
Devices are shipped from the factory with the memory content erased (to FFFFh).
For a list of available options (Speed, Package, etc...) or for further information on any aspect of this de-
vice, please contact the STMicroelectronics Sales Office nearest to you.
Table 30. Revision History
Example:
M59DR008E
100 ZB
6
T
Device Type
M59
Architecture
D = Dual Bank Page Mode
Operating Voltage
R = 1.8V
Device Function
008E = 8 Mbit (512Kb x16), Dual Bank: 1/half-1/half partitioning, Top Boot
008F = 8 Mbit (512Kb x16), Dual Bank: 1/half-1/half partitioning, Bottom Boot
Random Speed
100 = 100 ns
120 = 120 ns
Package
N = TSOP48: 12 x 20mm
ZB = FBGA48: 0.75mm pitch
Temperature Range
1 = 0 to 70°C
6 = –40 to 85°C
Option
T = Tape & Reel packing
Date
Revision Details
September 1999
First Issue
10/06/99
FBGA Connections change (Table 1, Figure 2A)
t
WHGL
and t
EHGL
Specification change (Table 26, 27)
10/20/99
FBGA Package Outline drawing and Mechanical Data change (Table 32, Figure 15)
Daisy Chain diagrams, Package and PCB Connections, added (Figure 16, 17)
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M59DR008FZB 8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
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相關代理商/技術參數(shù)
參數(shù)描述
M59DR008F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008F100N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008F100N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008F100ZB1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory
M59DR008F100ZB6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:8 Mbit 512Kb x16, Dual Bank, Page Low Voltage Flash Memory