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參數(shù)資料
| 型號(hào)： | M59DR016-ZBT |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory |
| 中文描述： | 16兆1兆x16插槽，雙行，頁(yè)1.8V電源閃存 |
| 文件頁(yè)數(shù)： | 2/37頁(yè) |
| 文件大?。?/td> | 240K |
| 代理商： | M59DR016-ZBT |
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M59DR016C, M59DR016D
2/37
Figure 2. TFBGA Connections (Top view through package)
AI04113
C
B
A
8
7
6
5
4
3
2
1
E
D
F
A4
A7
VPP
A8
A11
A13
A0
E
DQ8
DQ5
DQ14
A16
VSS
DQ0
DQ9
DQ3
DQ6
DQ15
VDDQ
DQ1
DQ10
VDD
DQ7
VSS
DQ2
A2
A5
A17
W
A10
A14
A1
A3
A6
NC
NC
A9
A12
A15
RP
A18
DQ4
DQ13
G
DQ12
DQ11
WP
A19
Table 1. Signal Names
A0-A19
Address Inputs
DQ0-DQ15
Data Input/Outputs, Command Inputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Power Down
WP
Write Protect
V
DD
Supply Voltage
V
DDQ
Supply Voltage for Input/Output
Buffers
V
PP
Optional Supply Voltage for
Fast Program & Erase
V
SS
Ground
NC
Not Connected Internally
DESCRIPTION
The M59DR016 is a 16 Mbit non-volatile Flash
memory that may be erased electrically at block
level and programmed in-system on a Word-by-
Word basis using a 1.65V to 2.2V V
DD
supply for
the circuitry. For Program and Erase operations
the necessary high voltages are generated inter-
nally. The device supports asynchronous page
mode from all the blocks of the memory array.
The array matrix organization allows each block to
be erased and reprogrammed without affecting
other blocks. All blocks are protected against pro-
gramming and erase at Power Up. Blocks can be
unprotected to make changes in the application
and then reprotected.
Instructions for Read/Reset, Auto Select, Write
Configuration Register, Programming, Block
Erase, Bank Erase, Erase Suspend, Erase Re-
sume, Block Protect, Block Unprotect, Block Lock-
ing, CFI Query, are written to the memory through
a Command Interface using standard micropro-
cessor write timings.
The device is offered in TFBGA48 (0.75 mm pitch)
packages and it is supplied with all the bits erased
(set to ‘1’).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| M59DR032A | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100ZB1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032A100ZB6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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