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參數(shù)資料
| 型號(hào)： | M5M28F101AFP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY |
| 中文描述： | 1048576位（131072 - Word的8位）的CMOS閃存 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | M5M28F101AFP |
MITSUBISHI LSIs
1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
M5M28F101AFP,J,VP,RV-85,-10
(970407)
5
DC ELECTRICAL CHARACTERISTICS
(Ta = 0~70°C, Vcc = 5V±0.5V, unless otherwise noted)
I
LI
I
LO
I
SB1
I
SB2
I
CC1
I
CC2
I
CC3
Symbol
Parameter
Max
10
10
Typ
Limits
Min
Test conditions
Unit
Input leakage current
Output leakage current
V
CC
stand-by current
V
CC
= 5.5V, CE = V
IH
V
CC
= 5.5V, CE = V
CC±
0.2V
V
CC
= 5.5V, CE = V
IL
, f = 11.8MHz, I
OUT
= 0mA
μA
μA
mA
μA
mA
mA
mA
100
30
30
30
10
100
30
30
Vcc+0.5
0.45
V
CC
active read current
V
CC
program current
V
CC
erase current
V
PP
read current
V
PP
= V
PPH
0V
≤
V
PP
≤
V
CC
V
CC<
V
PP
≤
6.5V
V
PP
= V
PPH
0.8
100
I
PP1
I
PP2
I
PP3
V
IL
V
IH
V
OL
V
OH1
V
OH2
V
PPL
V
PPH
V
PP
program current
V
PP
erase current
Input low voltage
Input high voltage
Output low voltage
Output high voltage
V
PP
voltage during read-only mode
V
PP
voltage during read/write mode
μA
mA
mA
V
V
V
V
V
V
0V
≤
V
IN
≤
V
CC
0V
≤
V
OUT
≤
V
CC
V
PP
= V
PPH
V
PP
= V
PPH
V
PP
= V
PPH
I
OL
= 5.8mA
I
OH
= –2.5mA
I
OH
= –100μA
1
6.5
12.6
12.0
11.4
0
Vcc–0.4
2.0
– 0.5
Read-Only Mode
t
RC
t
a (AD)
t
a (CE)
t
a (OE)
t
CLZ
t
OLZ
t
DF
t
OH
t
WRR
Note 4 : V
CC
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
.
Timing measurements are made under AC WAVEFORMS FOR READ OPERATIONS.
Read cycle time
Address access time
Chip enable access time
Output enable access time
Chip enable to output in low Z
Output enable to output in low Z
Output enable high to output in low Z
Output hold from CE, OE, addresses
Write recovery time before read
ns
ns
ns
ns
ns
ns
ns
ns
μs
6
25
0
100
100
100
50
0
0
25
0
6
85
85
85
45
0
0
Symbol
Parameter
Unit
Max
Min
Max
Min
Limits
M5M28F101A-85 M5M28F101A-10
AC ELECTRICAL CHARACTERISTICS
(Ta = 0~70°C, Vcc = 5V±0.5V, unless otherwise noted)
2.4
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
ELQX
t
GLQX
t
GHQZ
t
OH
t
WHGL
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PDF描述 |
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| M5M29FB800FP | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-10 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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參數(shù)描述 |
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| M5M28F101J12 | 制造商:MITS 功能描述:28F010-120 S8H2A |
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| M5M28F101J-15 | 制造商:Mitsubishi Electric 功能描述: |
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| M5M29FB800FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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