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參數(shù)資料
| 型號(hào)： | M5M28F101AFP |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY |
| 中文描述： | 1048576位（131072 - Word的8位）的CMOS閃存 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 96K |
| 代理商： | M5M28F101AFP |
MITSUBISHI LSIs
1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
M5M28F101AFP,J,VP,RV-85,-10
(970407)
6
Read/Write Mode
t
WC
t
AS
t
AH
t
DS
t
DH
t
WRR
t
RRW
t
CS
t
CH
t
WP
t
WPH
t
DP
t
DE
t
OEH
t
DAEC
t
DAP
t
VSC
t
OWP
t
OWS
t
OWH
t
OAS
Write cycle time
Address set-up time
Address hold time
Data set-up time
Data hold time
Write recovery time before read
Read recovery time before write
Chip enable set-up time
Chip enable hold time
Write pulse width
Write pulse width high
Duration of program operation
Duration of erase operation
Output enable hold time before status / data polling
Duration of auto erase operation
Duration of auto program operation
V
PP
set-up time to chip enable low
Write pulse width (optional write)
Write enable set-up time (optional write)
Write enable hold time (optional write)
Address set-up time (optional write)
ns
ns
ns
ns
ns
μs
ns
ns
ns
ns
ns
μs
Symbol
Parameter
Unit
Max
Min
100
Max
Min
Limits
M5M28F101A-85
M5M28F101A-10
Note 5 : a. Read timing parameters during read/write mode are the same as during read-only mode.
b. V
CC
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
.
ms
ns
s
μs
μs
ns
ns
ns
ns
10
50
60
0
60
20
0
20
0
6
100
1.7
9.5
10
10
50
60
0
85
60
20
0
20
0
6
100
1.7
9.5
10
t
OAH
t
ODS
t
ODH
Address hold time (optional write)
Data set-up time (optional write)
Data hold time (optional write)
ns
ns
ns
1
12
45
20
55
0
0
0
70
1
12
45
20
55
0
0
0
70
400
12.5
400
12.5
AC WAVEFORMS FOR READ OPERATIONS
DUT
3.3k
HIGH-Z
t
DF
t
RC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
5.0V
GND
ADDRE-
SSES
CE
OE
WE
DATA
V
CC
ADDRESS VALID
TEST CONDITIONS
FOR AC CHARACTERISTICS
Input voltage : V
IL
= 0.45V, V
IH
= 2.4V
Input rise and fall times :
≤
10ns
Reference voltage
at timing measurement : 1.5V
Output load : 1TTL gate + C
L
(= 100pF)
or
t
OH
t
OLZ
t
a (CE)
t
WRR
t
CLZ
t
a (AD)
t
a (OE)
HIGH-Z
1N914
1.3V
C
L
= 100pF
OUTPUT VALID
t
AVAV
t
AVWL
t
WLAX
t
DVWH
t
WHDX
t
WHGL
t
GHWL
t
ELWL
t
WHEH
t
WLWH
t
WHWL
t
WHWL1
t
WHWL2
t
VPEH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M29FB800FP | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-10 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800RV-10 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-12 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M28F101J12 | 制造商:MITS 功能描述:28F010-120 S8H2A |
| M5M28F101J-12 | 制造商:MITS 功能描述:28F010-120 S8H2A |
| M5M28F101J-15 | 制造商:Mitsubishi Electric 功能描述: |
| M5M29F25611VP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY |
| M5M29FB800FP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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