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| 型號(hào)： | M5M29FB800RV-10 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 8,388,608位（1048,576 - 576 - Word的8位/ 524,288字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁(yè)數(shù)： | 6/14頁(yè) |
| 文件大小： | 151K |
| 代理商： | M5M29FB800RV-10 |
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MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
May 1997 , Rev.6.1
6
CAPACITANCE
Symbol
Parameter
Test conditions
pF
pF
Unit
Max
8
12
Typ
Min
Limits
Ta = 25°C, f = 1MHz, V
in
= V
out
= 0V
Input capacitance (Address, Control Pins)
Output capacitance
C
IN
C
OUT
Conditions
ABSOLUTE MAXIMUM RATINGS
Parameter
With respect to Ground
Symbol
V
cc
V
I1
V
I2
All input or output voltage except V
cc,
A9,/RP
A9,RP supply voltage
V
cc
voltage
1)
Unit
V
V
V
Min
-0.2
-0.6
Max
4.6
4.6
-0.6
0
-10
-65
14.0
70
80
125
100
Ambient temperature
Temperature under bias
Storage temperature
Output short circuit current
T
a
T
bs
T
stg
I
OUT
°C
°C
°C
mA
1) Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage
on input/output pins is V
CC
+0.5V which, during transitions, may overshoot to V
CC
+1.5V for periods <20ns.
DC ELECTRICAL CHARACTERISTICS
(Ta = 0 ~ 70°C, Vcc = 3.3V±0.3V, unless otherwise noted)
Symbol
Parameter
Max
±1.0
Typ1)
Limits
Min
Test conditions
Unit
V
CC
standby current
I
LO
I
SB1
±10
200
Output leakage current
μA
μA
0V
≤
V
OUT
≤
V
CC
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, /CE = /RP =/WP = V
IH
I
LI
Input leakage current
μA
0V
≤
V
IN
≤
V
CC
V
CC
deep powerdown current
Output high voltage
V
V
V
OL
V
OH1
V
OH2
V
LKO
Output low voltage
V
V
V
V
I
OL
= 5.8mA
I
OH
= –2.5mA
I
OH
= –100μA
0.45
Vcc+0.5
V
IH
Input high voltage
2.0
0.8
V
IL
Input low voltage
– 0.5
0.85Vcc
Vcc–0.4
1.5
All currents are in RMS unless otherwise noted.
1) Typical values at Vcc=3.3V, Ta=25°C
2) To protect against initiation of write cycle during Vcc power-up/ down, a write cycle is locked out for Vcc less than V
LKO.
If Vcc is less than V
LKO, Write State Machine is reset to read mode. When the Write State Machine is in Busy state, if Vcc is less than V
LKO
, the alteration of memory contents
may occur.
I
CC3
I
CC4
I
CC5
V
CC
program current
V
CC
erase current
V
CC
suspend current
mA
mA
μA
40
40
200
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, /CE = /RP =/WP = V
IH
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, /CE = /RP =/WP = V
IH
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, /CE = /RP =/WP = V
IH
V
ID
A9 intelligent identifier voltage
11.4
12.6
V
12.0
V
IHH
11.4
12.6
V
/RP unlock voltage
12.0
Low V
CC
Lock-Out voltage 2)
2.5
I
RP
I
ID
/RPall block unlock current
A9 intelligent identifier current
/RP = V
HH max
A9 = V
ID max
100
100
μA
μA
I
SB2
5
V
CC
= 3.6V, V
IN
=GND or V
CC
,
/CE = /RP = /WP= V
CC
±0.3V
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, /RP = V
IL
V
CC
= 3.6V, V
IN
=GND or V
CC
, /RP =GND±0.3V
μA
1
25
mA
I
CC1
V
CC
read current for Word or Byte
V
CC
= 3.6V, V
IN
=V
IL
/V
IH
, /CE = V
IL
,
/RP=OE=V
IH
, f = 10MHz, I
OUT
= 0mA
V
CC
= 3.6V,V
IN
=V
IL
/V
IH
, /CE =/WE= V
IL
,
/RP=/OE=V
IH
7
50
I
CC2
30
mA
V
CC
Write current for Word or Byte
μA
μA
15
5
5
1
I
SB3
I
SB4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M29FT800RV-10 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-12 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800RV-12 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-80 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800RV-80 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29FB800RV-12 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-80 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-10 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-12 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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