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參數(shù)資料
| 型號(hào)： | M5M29FB800RV-10 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| 中文描述： | 8,388,608位（1048,576 - 576 - Word的8位/ 524,288字BY16位）的CMOS 3.3只，塊擦除閃存 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 151K |
| 代理商： | M5M29FB800RV-10 |
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
May 1997 , Rev.6.1
9
TEST CONDITIONS
FOR AC CHARACTERISTICS
Input voltage : V
IL
= 0V, V
IH
= 3.0V
Input rise and fall times :
≤
5ns (80ns)
≤
10ns (100/120ns)
Reference voltage
at timing measurement : 1.5V
Output load : 1TTL gate +
CL(100pF for 100/120ns)
CL(30pF for 80ns)
or
AC WAVEFORMS FOR READ OPERATION AND TEST CONDITIONS
OUTPUT VALID
HIGH-Z
t
DF(OE)
t
RC
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
ADDRESSES
/CE
/OE
/WE
DATA
ADDRESS VALID
3.3V
GND
V
CC
t
OH
t
OLZ
t
a (CE)
t
OEH
t
CLZ
t
a (AD)
t
a (OE)
HIGH-Z
DUT
3.3k
1N914
1.3V
C
L
=30/100pF
V
IH
V
IL
/RP
t
PS
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
ADDRESSES
(A
0
- A
18
)
ADDRESS VALID
/CE
/BYTE
DATA
(D
0
- D
7
)
BYTE AC WAVEFORMS FOR READ OPERATION
t
a(AD)
HIGH-Z
V
IH
V
IL
DATA
(D
8
- D
14
)
HIGH-Z
V
IH
V
IL
D
15
/ A
-1
t
a(BYTE)
t
BHZ
VALID
VALID
OUTPUT VALID
VALID
A
-1
D
15
A
-1
V
IH
V
IL
/OE
When /BYTE=V
IH
, /CE=/OE=V
IL
, D
15
/A
-1
is output status. At this time, input signal must not be applied.
ADDRESS VALID
t
a(AD)
t
a(CE)
t
a(OE)
t
a(BYTE)
t
OLZ
t
BCD
t
BAD
t
CLZ
t
BAD
t
OH
t
DF(OE)
t
DF(CE)
t
DF(CE)
t
PHZ
Vcc POWER UP / DOWN TIMING
V
IH
V
IL
/RP
Read /Write Inhibit
t
VCS
V
IH
V
IL
/CE
V
IH
V
IL
/WE
t
PS
t
PS
Read /Write Inhibit
Read /Write Inhibit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M29FT800RV-10 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-12 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800RV-12 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-80 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FT800RV-80 | 8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M29FB800RV-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800RV-80 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
| M5M29FB800VP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY |
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