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參數(shù)資料
| 型號： | M5M5V4R08J-15 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | TV 37C 37#22D SKT RECP |
| 中文描述： | 4194304位（524288 - Word的8位）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 56K |
| 代理商： | M5M5V4R08J-15 |
M5M5V4R08J-12,-15,-20
MITSUBISHI LSIs
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
MITSUBISHI
ELECTRIC
1
Outline
36P0K (SOJ)
P R E L IMINA R Y
Notice: This is not a final specification.
Some parametric limits are subject to change
data
inputs/
outputs
(0V)
(3.3V)
data
inputs/
outputs
data
inputs/
outputs
write control
input
datainputs/
outputs
chip select
input
output enable
input
PIN C ONF IGUR ATION (TOP VIE W)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A
3
A
4
A
2
A
1
A
0
DQ
1
DQ
2
V
CC
36
35
34
33
32
31
30
29
28
27
26
25
24
23
OE
DQ
8
S
DQ
5
A
14
A
13
DQ
7
GND
V
CC
DQ
6
W
A
5
A
9
A
8
A
7
A
6
DQ
3
DQ
4
22
21
GND
1997.02.06 Rev.D
DESCRIPTION
The M5M5V4R08J is a family of 524288-word by 8-bit static
RAMs, fabricated with the high performance CMOS silicon
gate process and designed for high speed application.
The M5M5V4R08J is offered in a 36-pin plastic small outline
J-lead package(SOJ).
These device operate on a single 3.3V supply, and are directly
TTL compatible. They include a power down feature as well.
APPLICATION
High-speed memory units
BLOC K DIAGR AM
FEATURES
Fast access time
M5M5V4R08J-12
12ns(max)
M5M5V4R08J-15
15ns(max)
M5M5V4R08J-20
20ns(max)
Low power dissipation Active
363mW(typ)
Stand by
3.3mW(typ)
Single +3.3V power supply
Fully static operation : No clocks, No refresh
Common data I/O
Easy memory expansion by S
Three-state outputs : OR-tie capability
OE prevents data contention in the I/O bus
Directly TTL compatible : All inputs and outputs
address
inputs
address
inputs
address
inputs
address
inputs
(0V)
(3.3V)
DECODERS
A
16
A
15
A
14
A
13
A
12
A
11
A
10
A
9
20 21 22 23 24
18
32 33
A
5
A
6
A
8
A
7
A
4
A
3
A
2
A
1
A
0
1
2
3
4
5
14
15
16
17
S
6
OE
31
W
13
DQ
8
DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
DQ
2
DQ
1
7
8
11
12
25
26
29
30
COLUMN
I/O
CIRCUITS
COLUMN INPUT BUFFERS
R
R
D
VCC
27
GND
10
28
9
MEMORY ARRAY
512 ROWS
8192 COLUMNS
COLUMN ADDRESS
DECODERS
(3.3V)
(0V)
address
inputs
address inputs
data
inputs/
outputs
PACKAGE
36pin 400mil SOJ
17
18
A
18
A
17
A
16
A
15
NC
A
12
A
11
A
10
20
19
NC
M
O
A
17
A
16
34 35
相關PDF資料 |
PDF描述 |
|---|---|
| M5M5V5636GP-16 | 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM |
| M5M5V5636GP16 | 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM |
| M5M5W816TP-70HI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816TP-85HI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-70HI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M5M5V4R08J-20 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM |
| M5M5V5636GP-13 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM |
| M5M5V5636GP-13I | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM |
| M5M5V5636GP16 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM |
| M5M5V5636GP-16 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM |
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