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參數(shù)資料
| 型號(hào)： | M5M5W816WG-70HI |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| 中文描述： | 8388608位（524288字由16位）的CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | M5M5W816WG-70HI |
MITSUBISHI ELECTRIC
M5M5W816WG - 70HI, 85HI
2001.6.11 Ver. 3.1
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
MITSUBISHI LSIs
PRELIMINARY
Some parametric limits are subject to change
* Typical parameter indicates the value for the center
of distribution, and is not 100% tested.
1
DESCRIPTION
The M5M5W816 is a family of low voltage 8-Mbit static RAMs
organized as 524288-words by 16-bit, fabricated by Mitsubishi's
high-performance 0.18μm CMOS technology.
The M5M5W816 is suitable for memory applications where a
simple interfacing , battery operating and battery backup are the
important design objectives.
M5M5W816WG is packaged in a CSP (chip scale package),
with the outline of 7.5mm x 8.5mm, ball matrix of 6 x 8 (48ball)
and ball pitch of 0.75mm. It gives the best solution for a
compaction of mounting area as well as flexibility of wiring pattern
of printed circuit boards.
Those are summarized in the part name table below.
FEATURES
- Single 2.7~3.0V power supply
- Small stand-by current: 0.1μA (2V, typ.)
- No clocks, No refresh
- Data retention supply voltage =2.0V
- All inputs and outputs are TTL compatible.
- Easy memory expansion by S1#, S2, BC1#
and BC2#
- Common Data I/O
- Three-state outputs: OR-tie capability
- OE prevents data contention in the I/O bus
- Process technology: 0.18μm CMOS
- Package: 48ball 7.5mm x 8.5mm CSP
PIN CONFIGURATION
A0
~ A18
DQ1 ~ DQ16
S1#
S2
W#
OE#
BC1#
BC2#
Address input
Data input / output
Chip select input 1
Chip select input 2
Write control input
Output enable input
Lower Byte (DQ1 ~ 8)
Upper Byte (DQ9 ~ 16)
Pin
Function
Vcc
GND
Power supply
Ground supply
(TOP VIEW)
40mA
(10MHz)
10mA
(1MHz)
Version,
Operating
temperature
Part name
Power
Supply
Access time
max.
Stand-by current
* Typical
25°C 40°C
Ratings (max.)
40°C
Active
current
Icc1
* ( typ.)
70°C
85°C
25°C
85ns
2.7 ~ 3.0V
I-version
-40 ~ +85°C
M5M5W816WG -70HI
40
4
20
2
1.0
0.5
NC : No Connection
*Don't connect E3 ball to voltage level more than 0V
1
2
3
4
5
6
A
B
C
D
E
F
G
D Q 3
A7
D Q 1
S2
VCC
GND
D Q 6
A2
S1#
D Q 2
D Q 4
D Q 5
D Q 7
A1
A4
A6
A5
A17
A16
A15
A0
A3
A14
OE#
BC2#
DQ15
DQ13
DQ12
DQ10
BC1#
DQ16
DQ14
GND
VCC
D Q 11
D Q 8
W #
A13
A12
N.C.
D Q 9
N.C.
A11
A10
A9
A8
H
A18
NC or
GND
Outline : 48F7Q
(μA @ Vcc=3.0V)
M5M5W816WG -85HI
70ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M5W816WG-85HI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-85H | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-85L | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-85LI | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
| M5M5W816WG-10H | 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M5W816WG-70HI#SQ | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M5W816WG-70HI(#BT) | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M5W817KT-70HI | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M5W817KT-70HI(#BT) | 制造商:Renesas Electronics Corporation 功能描述: |
| M5M80011A | 制造商:Mitsubishi Electric 功能描述: |
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