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參數(shù)資料
| 型號(hào)： | M68AF511AM70MC1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 4 Mbit (512K x8), 5V Asynchronous SRAM |
| 中文描述： | 4兆位（為512k × 8），5V的異步SRAM |
| 文件頁數(shù)： | 5/18頁 |
| 文件大?。?/td> | 129K |
| 代理商： | M68AF511AM70MC1 |
5/18
M68AF511A
Figure 4. Block Diagram
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for periods greater than 1 sec may affect
device reliability. Refer also to the STMicroelec-
tronics SURE Program and other relevant quality
documents.
Table 2. Absolute Maximum Ratings
Note: 1. One output at a time, not to exceed 1 second duration.
2. Up to a maximum operating V
CC
of 6.0V only.
AI05916
ROW
DECODER
A8
A18
DQ0
DQ7
COLUMN
DECODER
I/O CIRCUITS
A0
A7
W
G
MEMORY
ARRAY
E
VCC
VSS
Symbol
Parameter
Value
Unit
I
O(1)
Output Current
20
mA
T
A
Ambient Operating Temperature
–55 to 125
°C
T
STG
Storage Temperature
–65 to 150
°C
V
CC
Supply Voltage
–0.5 to 6.5
V
V
IO (2)
Input or Output Voltage
–0.5 to V
CC
+0.5
V
P
D
Power Dissipation
1
W
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| M68AF511AM70MC1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8), 5V Asynchronous SRAM |
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| M68AF511AM70NC1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (512K x8), 5V Asynchronous SRAM |
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