參數(shù)資料
型號(hào): M68AW127BM10MC6T
廠商: 意法半導(dǎo)體
英文描述: 1Mbit 128K x8, 3.0V Asynchronous SRAM
中文描述: 1Mbit的128K的× 8,3.0V異步SRAM
文件頁(yè)數(shù): 5/20頁(yè)
文件大小: 327K
代理商: M68AW127BM10MC6T
5/20
M68AW127B
Figure 5. Block Diagram
MAXIMUM RATING
Stressing the device above the rating listed in the
“Absolute Maximum Ratings” table may cause
permanent damage to the device. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rat-
ing conditions for extended periods may affect de-
vice
reliability.
Refer
STMicroelectronics SURE Program and other rel-
evant quality documents.
also
to
the
Table 2. Absolute Maximum Ratings
Note: 1. One output at a time, not to exceed 1 second duration.
2. Up to a maximum operating V
CC
of 3.6V only.
AI05471
ROW
DECODER
A7
A16
DQ0
DQ7
COLUMN
DECODER
I/O CIRCUITS
A0
A6
W
G
MEMORY
ARRAY
E1
E2
Ex
Symbol
Parameter
Value
Unit
I
O (1)
Output Current
20
mA
T
A
Ambient Operating Temperature
–55 to 125
°C
T
STG
Storage Temperature
–65 to 150
°C
V
CC
Supply Voltage
–0.3 to 4.6
V
V
IO (2)
Input or Output Voltage
–0.5 to V
CC
+0.5
V
P
D
Power Dissipation
1
W
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