參數(shù)資料
型號(hào): M69AW024BE60ZB8F
廠商: 意法半導(dǎo)體
英文描述: 16 Mbit (1M x16) 3V Asynchronous PSRAM
中文描述: 16兆位(1米× 16)3V的異步移動(dòng)存儲(chǔ)芯片
文件頁(yè)數(shù): 10/25頁(yè)
文件大?。?/td> 147K
代理商: M69AW024BE60ZB8F
M69AW024BE
10/25
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. Exposure to Abso-
lute Maximum Rating conditions for extended
periods may affect device reliability. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied.
Table 3. Absolute Maximum Ratings
Note: 1. Compliant with the JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), and the European directive on Restrictions on
Hazardous Substances (RoHS) 2002/95/EU.
Symbol
Parameter
Min
Max
Unit
I
O
Output Current
–50
50
mA
T
A
Ambient Operating Temperature
–30
85
°C
T
LEAD
Lead Temperature During Soldering
(1)
°C
T
STG
Storage Temperature
–55
125
°C
V
CC
Core Supply Voltage
–0.5
3.6
V
V
IO
Input or Output Voltage
–0.5
3.6
V
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