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參數(shù)資料
| 型號： | M69AW024BE60ZB8F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16 Mbit (1M x16) 3V Asynchronous PSRAM |
| 中文描述： | 16兆位（1米× 16）3V的異步移動存儲芯片 |
| 文件頁數(shù)： | 13/25頁 |
| 文件大?。?/td> | 147K |
| 代理商： | M69AW024BE60ZB8F |
13/25
M69AW024BE
Table 7. Read and Standby Modes AC Characteristics
Note: 1. The maximum value of this timing is applicable if E1 is kept Low with addresses unchanged.If needed by the system operation,
please contact your local ST representative for relaxation of the 1000ns limitation.
2. Addresses should not be changed during t
AVAX
(min).
3. These parameters are measured according to the conditions on input and output timing reference voltage shown on
Figure 6., AC
Measurement I/O Waveform
.
4. The output load capacitance is 5pF without any other load.
5. These timings are given for E1 Low.
6. t
AVAX
(min) must be satisfied.
7. If the current value of t
WHGL
is lower than the minimum value given in the above table, t
AVQV
during the following Read operation
may increase by t
WHGL
(current)
–
t
WHGL
(min).
8. All timings are measured according to the conditions for output transition timing reference voltage shown on
Figure 6., AC Mea-
surement I/O Waveform
.
Symbol
Alt.
Parameter
M69AW024BE
Unit
–60
Min
Max
t
AVAX,
t
ELEH
(1,2)
t
RC
Read Cycle Time
70
1000
ns
t
ELQV(3)
t
CE
Chip Enable Access Time
60
ns
t
GLQV(3)
t
OE
Output Enable Access Time
40
ns
t
AVQV(3,5)
t
AA
Address Access Time
60
ns
t
BLQV(3)
t
BA
LB, UB Low to Output Valid
30
ns
t
AXQX,
t
GHQX,
t
BHQX
, t
EHQX
(8)
t
OH
Output Hold Time after Chip Enable Low
5
ns
t
ELQX(4,8)
t
CLZ
Chip Enable Low to Output Low-Z
5
ns
t
GLQX(4,8)
t
OLZ
Output Enable Low to Output Low-Z
0
ns
t
BLQX(4,8)
t
BLZ
LB, UB Low to Output Low-Z
0
ns
t
EHQZ(8)
t
CHZ
Chip Enable High to Output Hi-Z
20
ns
t
GHQZ(8)
t
OHZ
Output Enable High to Output Hi-Z
20
ns
t
BHQZ(8)
t
BHZ
LB, UB High to Output Hi-Z
20
ns
t
AVEL
t
ASC
Address Set-up Time to Chip Enable Low
–5
ns
t
AVGL
t
ASO
Address Valid to Output Enable Low
10
ns
t
AXAV(5)
t
AX
Address Invalid Time
10
ns
t
EHAX(6)
t
CHAH
Chip Enable High to Address Hold Time
–5
ns
t
GHAX
t
OHAH
Output Enable High to Address Hold Time
–5
ns
t
WHGL(7)
t
WHOL
Write Enable High to Output Enable Low (Read Operations)
10
1000
ns
t
EHEL
t
CP
Chip Enable High Pulse Width
10
ns
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參數(shù)描述 |
|---|---|
| M69AW024BL60ZB8T | 功能描述:靜態(tài)隨機(jī)存取存儲器 16 MBIT (1M X16) 3V Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| M69AW024BL70ZB8T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1M x16) 3V Asynchronous PSRAM |
| M69AW048B | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2M x16) 3V Asynchronous PSRAM |
| M69AW048BL70ZB8 | 制造商:STMicroelectronics 功能描述: |
| M69AW048BL70ZB8T | 功能描述:靜態(tài)隨機(jī)存取存儲器 32 MBIT (2M X16) 3V Asynch 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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