參數(shù)資料
型號(hào)： M69AW024BL60ZB8T
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit (1M x16) 3V Asynchronous PSRAM
中文描述： 16兆位（1米× 16）3V的異步移動(dòng)存儲(chǔ)芯片
文件頁(yè)數(shù)： 18/29頁(yè)
文件大?。?/td> 429K
代理商： M69AW024BL60ZB8T
M69AW024B
18/29
Note: 1. The minimum value must be equal to or greater than the sum of actual t
ELEH
(or t
WLWH
).
2. The new write address is valid from either E1 High or W High.
3. t
AXGL1
is specified from end of t
AVAX
(Min) and is a reference value when access time is determined by t
AXGL1
. If actual value is
lower than specified minimum value, t
AXGL1
is increased by the difference between the actual value and the specified minimum
value.
4. t
AXGL1
maximum is applicable if E1 is kept Low and both W and G are kept High.
5. t
AXGL2
is the absolute minimum value if the Write cycle terminates with W and E1 Low.
6. t
GHEL
(Min) must be kept if the Read cycle is not performed prior to the Write cycle. In case G is disabled after a time t
GHEL
(Min),
W must go Low t
ELEH2
(Min) after E1 goes Low. In other words, the Read cycle is initiated if t
GHEL
(Min) is not kept.
7. Applicable if E1 stays Low after the Read cycle.
8. t
ELEH
or t
WLWH
is applicable if the Write operation is initiated by E1 or W, respectively.
9. If the write operation is terminated by W followed by E1 High, the sum of actual t
ELWL
and t
WLWH
and the sum of actual t
AVWL
and
t
WLWH
must be equal or greater than 60ns.
10. t
EHEL1
or t
WHWL
is applicable if the Write operation is terminated by E1 or W, respectively. If E1 goes High before t
WHWL
(Min), then
t
EHEL1
(Min) must apply.
11. t
EHEL1
and t
EHEL2
is applicable if write operation is terminated by E1 and W, respectively. In case E1 is brought to High before sat-
isfaction of t
EHEL2
(min), the t
EHEL1
(min) is also applied.
12. For other timings please refer to
Table 7., Read and Standby Modes AC Characteristics
.
t
WLEL
t
WS
Write Enable Low Set-up Time
0
0
ns
t
WLWH(1,8)
t
WP
Write Enable Write Pulse Width
45
50
ns
t
WLWL
t
WC
Write Enable Write Cycle Time
80
90
ns
Symbol
Alt.
Parameter
M69AW024B
Unit
–60
–70
Min
Max
Min
Max
相關(guān)PDF資料
PDF描述
M69AW024BL70ZB8T 16 Mbit (1M x16) 3V Asynchronous PSRAM
M69AW024B 16 Mbit (1M x16) 3V Asynchronous PSRAM
M69AW048B 32 Mbit (2M x16) 3V Asynchronous PSRAM
M69AW048BL70ZB8 32 Mbit (2M x16) 3V Asynchronous PSRAM
M6D-50 DOUBLE-BALANCED MIXER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M69AW024BL70ZB8T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (1M x16) 3V Asynchronous PSRAM
M69AW048B 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit (2M x16) 3V Asynchronous PSRAM
M69AW048BL70ZB8 制造商:STMicroelectronics 功能描述:
M69AW048BL70ZB8T 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 32 MBIT (2M X16) 3V Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
M69KB096AA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*